Microstructural study on the grain growth inhibition of VC-doped WC-Co cemented carbides

摘要

Recent works investigating the grain growth inhibition mechanism by rapidly quenched VC-doped cemented carbides are reviewed. The rapid quenching enables to observe microscopic features at the sintering state of cemented carbide. The formation of (W,V)C-x layers at WC/Co interfaces has already occurred during liquid phase sintering which control the grain growth rate. The structure and thickness of (W,V)C-x layers are related to the lattice coherency between (W,V)C-x and WC grains. The difference in the interface structure with different carbon content results in the difference of grain growth rate. (C) 2016 Published by Elsevier Ltd.