首页> 外文期刊>International Journal of Refractory Metals & Hard Materials >The effect of TiO2 additive on the electrical resistivity and mechanical properties of pressureless sintered SiC ceramics with Al2O3-Y2O3
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The effect of TiO2 additive on the electrical resistivity and mechanical properties of pressureless sintered SiC ceramics with Al2O3-Y2O3

机译:AL2O3-Y2O3用TiO2添加剂对无压烧结SiC陶瓷电阻率和力学性能的影响

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In this study, SiC-TiC composite was fabricated by the reaction between TiO2 and SiC and in addition to the effect of TiO2 additive, influence of sintering temperatures on the electrical resistivity, the relationship between electrical resistivity and microstructure, density, indentation fracture resistance and hardness were investigated. The main goal of this study was to improve electrical resistivity while preserving mechanical properties of SiC body. The results showed that with 10 wt% Al2O3-Y2O3, the electrical resistivity reached to 9 x 10(8) Omega m. Increasing the amount of TiO2 particles from 2.5 to 10 wt% and changing the sintering temperature from 1850 degrees C to 1950 degrees C made the electrical resistivity to be variable in the range of 2.2 x 10(5) Omega m to 9 x 10(8) Omega m. In this report, the highest density, hardness and indentation fracture resistance for the samples containing 5 wt% additive which were sintered at 1900 degrees C were 96.2%, 24.4 GPa and 5.8 MPa.m(1/2), respectively. Microscopic images showed that if the grain boundary phase is located in the triple points or multiple points of grain boundary, the electrical resistivity will decrease and if it is located in full circumference of the SiC particles, due to failure of conducting pathways through SiC grains, the resistance of ceramics will increase instead.
机译:在该研究中,通过TiO2和SiC之间的反应来制造SiC-TiC复合材料,并且除了TiO 2添加剂的影响,烧结温度对电阻率的影响,电阻率和微观结构之间的关系,密度,压痕断裂抗性和调查硬度。本研究的主要目的是提高电阻率,同时保持SiC体的机械性能。结果表明,用10wt%的Al 2 O 3-Y 2 O 3,电阻率达到9×10(8)ωM。将TiO 2颗粒的量从2.5〜10wt%增加,从1850℃升高到1950℃的烧结温度使电阻率在2.2×10(5)ωm至9×10的范围内变化。(8 )omega m。在本报告中,含有5wt%添加剂的样品的最高密度,硬度和压痕断裂性,其在1900℃下烧结为96.2%,24.4gPa和5.8mPa.m(1/2)。显微图像显示,如果晶界相位位于三点或多个晶界的点,则电阻率会降低,并且如果它位于SiC颗粒的完全圆周上,由于通过SiC颗粒进行通路的故障,陶瓷的电阻将增加。

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