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Micro-Faraday cup array structures fabrication in silicon using deep reactive ion etching

机译:微法拉第杯阵列结构在硅中使用深反应离子蚀刻制造

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摘要

Micro-Faraday cup array (MFCA) detectors are used for the detection and analysis of incident ion particles with greater stability and precision. New and simple micro FCA structures have been designed and fabricated considering the application in mass spectrometry and laser plasma techniques. MFCA structures were fabricated using UV lithography followed by deep reactive ion etching (DRIE). The UV lithography process was utilised for fabrication of micro-Faraday cup array structure in photoresist (AZ4903) deposited on n-type silicon substrate. After that DRIE process was used for creating array pattern in silicon. Ultimately 1 × 16 arrays having 25 μm widths with 125 μm spacing were fabricated. Maximum depth achieved with DRIE process was 16 μm. Exposure time of lithography was found to be reduced by 110% using UV-LED source for these structures. Effects of etch cycle time on cup depth and sidewall angle have also been discussed.
机译:微法拉第杯阵列(MFCA)探测器用于检测和分析具有更大稳定性和精度的入射离子颗粒。 考虑到在质谱和激光等离子体技术中的应用,设计和制造了新的和简单的微型FCA结构。 使用UV光刻制造MFCA结构,然后是深反应离子蚀刻(Drie)。 UV光刻工艺用于在沉积在N型硅衬底上的光致抗蚀剂(AZ4903)中的微法杯阵列结构的制造。 之后,Drie过程用于在硅中创建阵列模式。 最终制造了具有25μm宽度的1×16阵列,制造具有125μm间距的25μm宽度。 通过Drie工艺实现的最大深度为16μm。 使用UV-LED源对这些结构,发现光刻的曝光时间减少了110%。 还讨论了蚀刻循环时间对杯深和侧壁角度的影响。

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