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Orientation-dependent behaviors of H dissolution and diffusion near W surfaces: A first-principles study

机译:H溶解和扩散附近的定向依赖性行为:第一原理研究

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The dissolution and diffusion behaviors of H in the four low-Miller-index W surfaces ((110), (112), (100) and (111)) are systematically studied by the density functional theory approach to understand the orientation dependence of the H bubble distribution on surface. The results show that H accumulation on surface is influenced by H diffusion barrier as well as vacancy and H formation. The barriers of diffusion towards surfaces are larger than that in bulk. It indicates that H is prone to diffuse into the deep in bulk once H dissolves in surface. H is preferred to accumulate on the W(111) surface due to the lower formation energies of vacancy and H comparing to that in bulk. However, W(110) is the resistant surface for forming H bubble due to the higher formation energies of vacancy and H. The results are helpful for understanding the orientation dependence of surface damages on W surface and designing new plasma-facing materials.
机译:通过密度泛函理论方法系统地研究了四个低米勒折射率W表面((110),(112),(100)和(111))中的溶出和扩散行为,以了解依赖的方向依赖性 H泡沫分布在表面上。 结果表明,表面上的H积累受H扩散屏障的影响以及空位和H形成。 朝向表面的扩散障碍大于散装的屏障。 它表明H易于在表面上溶解到块状体中。 h由于空位的较低的形成能量和H块状物体比较,H优选在W(111)表面上积聚。 然而,W(110)是由于空位的较高形成能量和H的形成能量而形成H气泡的抗性表面有助于理解表面损坏对W表面的取向依赖性以及设计新的等离子体面向物质的方向依赖性。

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