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A study of ultraprecision mechanical polishing of single-crystal silicon with laser nano-structured diamond abrasive by molecular dynamics simulation

机译:分子动力学模拟用激光纳米结构金刚型磨料的单晶硅的超挑机抛光研究

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摘要

In the present study, a newly proposed mechanical polishing method of single-crystal silicon with nano-structured diamond abrasives fabricated by laser was investigated, using molecular dynamics (MD) simulations. The results were compared to conventional mechanical polishing under the same machining parameters. Polishing forces, atomic displacement, development of hydrostatic and von Mises stresses in the subsurface zone, temperature distribution, and polished surface morphologies during nano-polishing were investigated. An analysis model was also built to explore the subsurface damage mechanism in terms of examining the hydrostatic and shear stress distributions during nano-polishing. The analyses demonstrated that structured abrasives in silicon polishing lead to lower polishing forces, thinner subsurface damage layer, lower hydrostatic stresses, lower defect atom numbers, and less compressive normal stresses. Nevertheless, structured nanoscale abrasive polishing leads to lower material removal rates. Additionally, more Si-II forms from Si-I, when polishing with #-shaped groove abrasive is performed.
机译:在本研究中,使用分子动力学(MD)模拟,研究了一种具有激光制造的纳米结构金刚石磨料的单晶硅的新提出的机械抛光方法。将结果与相同的加工参数下的常规机械抛光进行比较。研究了抛光力,原子位移,静水压和von在纳米抛光期间的地下区,温度分布和抛光表面形貌中的静水压和von误解的静音的胁迫。在纳米抛光期间检查静压和剪切应力分布方面还建立了分析模型以探索地下损伤机制。分析证明,硅抛光中的结构化磨料导致较低的抛光力,较薄的地下损伤层,较低的静水应力,较低的缺陷原子数,较少的压缩正常应力。然而,结构化的纳米级磨料抛光导致材料去除率降低。另外,在抛光用#-射刷的槽磨料抛光时,来自Si-1的更多Si-II形式。

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