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Detection of Low-Density Ge Nanoparticles Using Surface-Enhanced Raman Spectroscopy

机译:表面增强拉曼光谱法检测低密度锗纳米粒子

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摘要

We demonstrate the sensitive detection and structural characterization of extremely low density Ge nanoparticles by surface-enhanced Raman spectroscopy (SERS). Ge films of monolayer coverage are fabricated by a gas evaporation technique and are deposited onto quartz and various metal substrates. The nanoparticle size and density, as obtained by transmission electron microscopy, are in the range of 6-9 nm and ~1.2×10~11 cm~(-2) respectively. The Raman intensity for the Ge films deposited on metal substrates (Ag, Au, or Al) shows a dramatic enhancement (for example, a factor of a few hundred for Ag) as compared to quartz substrates. Further, the Raman intensity enhancement from the different metals is understood in terms of contributions from interband transitions to the dielectric function in the visible excitation region used for Raman measurements. The observation of enhanced Raman signals from such low-density NP films shows the potential of non-invasive Raman spectroscopy for the study of optical and structural properties of nanoscale devices.
机译:我们证明了通过表面增强拉曼光谱(SERS)的极低密度Ge纳米粒子的灵敏检测和结构表征。通过气体蒸发技术制造单层覆盖的Ge膜,并将其沉积在石英和各种金属基板上。通过透射电子显微镜获得的纳米颗粒尺寸和密度分别在6-9nm和〜1.2×10〜11cm〜(-2)范围内。与石英衬底相比,沉积在金属衬底(Ag,Au或Al)上的Ge膜的拉曼强度显示出显着提高(例如,Ag的几百倍)。此外,根据带间跃迁对用于拉曼测量的可见激发区域中的介电函数的贡献,可以理解来自不同金属的拉曼强度增强。从这种低密度NP薄膜增强的拉曼信号的观察结果表明,非侵入性拉曼光谱技术可用于研究纳米级器件的光学和结构特性。

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