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首页> 外文期刊>Integrated Ferroelectrics >Temperature dependent electronic conduction through graphene oxide thin film based two terminal devices
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Temperature dependent electronic conduction through graphene oxide thin film based two terminal devices

机译:通过石墨烯氧化物薄膜的两个终端装置的温度依赖电子传导

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摘要

The temperature dependent electronic conduction through GO thin films sandwitched between indium tin oxide (ITO) substrates and top thermally deposited Al electrode (Al/GO/ITO) is explained. The curent-voltage (I-V) characteristic are measured at various temperatures range of 10-100 degrees C. The temperature dependent I-V through Al/GO/ITO structures in both the forward (ITO as anode) and reverse (ITO as cathode) directions, demonstrate Ohmic behavior with an estimated value of temperature coefficient of resistance 4.2 x 10(-3) identical to the value for Al. The electrical current decreases with increasing temperature at an applied voltage, suggesting the metallic behaviour arising from the formation of Al filament through the GO films.
机译:解释通过GO薄膜夹在氧化铟锡(ITO)衬底和顶部热沉积的Al电极(Al / Go / ITO)之间的薄膜晶体的电气传导。 在10-100℃的各种温度范围内测量静电电压(iv)特性。通过前进(ITO作为阳极)和反向(ITO为阴极)方向,通过Al / Go / ITO结构的温度依赖于Al / Go / ITO结构。 展示具有估计的电阻温度系数的欧姆行为4.2×10(-3)与Al的值相同。 电流随着施加电压的温度升高而降低,表明通过GO膜形成Al灯丝产生的金属行为。

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