Optically Induced Ferromagnetism in III-V Dilute Magnetic Semiconductors

摘要

Recently lot of research work is being aimed towards introducing electron spin as a new dimension in semiconductors that will provide faster and more efficient microelectronic devices. In this article mechanism of photo induced ferromagnetism in transition metal doped III-V diluted magnetic semiconductors (DMS) has been presented. Subsequently relationship between the free energy and magnetization has been analyzed using mean field theory. The relationship between doping concentration, Curie temperature and magnetization has been determined and impact of variation in incident light energy on transition temperature has been analyzed. An increase in Curie temperature has been observed when coupling intensity and frequency of the light is increased.