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机译:通过修改IN0.66GA0.34AS / INAS超晶级电子屏障的位置,改善(0.83)GA(0)A(0)A(7)AS / INP光电探测器的性能
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Photodetector; Electron barrier; Superlattice; InGaAs; Metamorphic;
机译:通过修改IN0.66GA0.34AS / INAS超晶级电子屏障的位置,改善(0.83)GA(0)A(0)A(7)AS / INP光电探测器的性能
机译:具有In_(0.66)Ga_(0.34)As / InAs超晶格电子势垒的变质In_(0.83)Ga_(0.17)As光电探测器中的暗电流抑制
机译:气体源MBE生长的具有渐变超晶格结构的InAlAs-InGaAs-InP MSM光电探测器的性能提高
机译:基于势垒增强结构的高性能InAs / GaSb超晶格长波长光电探测器
机译:II型InAs / GaSb超晶格红外光电探测器优化和门控光电探测器阵列实现。
机译:基于微结的双电子势垒II型InAs / InAsSb超晶格长波长红外光电探测器的暗电流降低
机译:基于微结的双电子屏障Type-II INAS / INASSB超晶格长波长红外光电探测器的暗电流降低
机译:采用1.3非对称Ina1Gaas / InGaasp结构改善高速波导光电探测器的饱和性能