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HV compliant current driver with on-chip read-out protection switch for neural stimulation

机译:HV兼容电流驱动器,具有片上读出保护开关,用于神经刺激

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This paper presents a current driver with a novel high voltage (HV) switch schematic for the use as a protective switch for recording circuits during the stimulation sequence in neural measurement system. The current driver can source and sink currents of amplitudes up to +/- 8.2 mA with a HV tolerance from 30 V up to 120 V. The proposed HV switch also tolerates the voltage difference up to 120 V between its terminals. Between stimulation sequences the driver provides the effective isolation of the stimulation electrode from ground and HV supply voltage. The inter pulse current is no more than 60 pA. The chip was fabricated with AMS HV 0.35 mu m CMOS technology. For test purposes the complete stimulation system including the proposed chip and the external C8051F410 controller was build. For the proposed system the mismatch between the sourced and sinked current does not exceed 20 mu A. The possibility to stimulate with frequencies up to 1 kHz is proven by measurement along with the electrode-tissue model.
机译:本文介绍了一种具有新型高压(HV)开关示意图的电流驱动器,用于用作神经测量系统中的刺激序列期间的用于记录电路的保护开关。电流驾驶员可以源和吸收高达+/- 8.2 mA的振荡电流,高达120 V的高速容差。所提出的HV开关还容忍其端子之间的电压差高达120 V。在刺激序列之间,驾驶员提供刺激电极与地面和HV供电电压的有效隔离。脉冲间电流不超过60Pa。芯片用AMS HV 0.35 mu M CMOS技术制造。对于测试目的,构建包括所提出的芯片和外部C8051F410控制器的完整刺激系统。对于所提出的系统,源极和下沉电流之间的错配不超过20μmA。通过测量和电极组织模型,通过测量来刺激高达1kHz的频率的可能性。

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