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On V-V/V-I type double balanced CMOS multiplier utilizing triode-region translinear principle

机译:关于V-V / V-I型双平衡CMOS乘法器利用三极区域转印原理

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摘要

For the first time, the triode-region of MOSFET has been exploited to evolve a novel technique in which voltage-translinear loop expression has been converted into voltage multiplication expression. This expression is thus utilized in realizing a triode-region translinear principle-based fully differential, four-quadrant CMOS voltage-to-voltage and voltage-to-current type multipliers. The elaborate CMOS design approach has been given and the second-order effects have been considered on its performance. The workability of the proposition has been verified by Spectre tool of Virtuoso from Cadence using 180 nM GPDK parameters by performing post layout simulation.
机译:首次,已经利用MOSFET的三极管区域以演变一种新颖的技术,其中电压转换环形表达式已被转换为电压乘法表达。 因此,该表达式用于实现三极管区域的转印原理的全差分,四象限CMOS电压 - 电压和电压到电流型乘法器。 已经给出了精心制作的CMOS设计方法,并考虑了二阶效应是对其性能的。 通过执行POST布局模拟,通过使用180nm GPDK参数来验证主题的可加工性。

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