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首页> 外文期刊>IEEE Transactions on Circuits and Systems. 1 >Low-voltage BiCMOS four-quadrant multiplier using triode-region transistors
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Low-voltage BiCMOS four-quadrant multiplier using triode-region transistors

机译:使用三极管区域晶体管的低压BiCMOS四象限乘法器

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A low-voltage BiCMOS four-quadrant multiplier using triode-region transistors is presented, this circuit has been fabricated in a 1.0 /spl mu/m BiCMOS process. Experimental results show that for a power supply of /spl plusmn/1.5 V, the linear range is over /spl plusmn/0.6 V with the linearity error of less than 2%. The total harmonic distortion is less than 2% with an input range up to /spl plusmn/0.6 V. The measured -3-dB bandwidth of this proposed BiCMOS multiplier is about 10 MHz. This circuit is expected to be useful in low-voltage analog signal-processing applications.
机译:提出了一种使用三极管区域晶体管的低压BiCMOS四象限乘法器,该电路是通过1.0 / spl mu / m BiCMOS工艺制造的。实验结果表明,对于/ spl plusmn / 1.5 V的电源,线性范围超过/ spl plusmn / 0.6 V,线性误差小于2%。当输入范围高达/ spl plusmn / 0.6 V时,总谐波失真小于2%。该拟议的BiCMOS乘法器的-3-dB带宽实测值为10 MHz。该电路有望在低压模拟信号处理应用中使用。

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