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Synthesis and characterization of novel Cu2O/PVDF nanocomposites for flexible ferroelectric organic electronic memory devices

机译:新型Cu2O / PVDF纳米复合材料的合成与表征柔性铁电有机电子存储器件

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Copper oxide nanoparticles loaded Poly(vinylidene fluoride) (PVDF) nanocomposites, at concentrations from 1 to 9 wt%, were developed by casting technique. The effect of the Cu2O nanoparticles on the structure, thermal, mechanical and dielectric properties of the PVDF were inspected. The scanning electron microscopy (FE-SEM) revealed the well dispersion of the Cu2O nanoparticles into the PVDF matrix up to 5 wt%. The X-ray diffraction (XRD) patterns and the infrared spectroscopy (FTIR) measurements implied that the inclusion of the Cu2O nanoparticles into the PVDF matrix leads to a transform of the non-polar semi-crystalline alpha-phase of the neat PVDF to highly crystallized polar beta-phase. Moreover, an increase of the thermal stability and crystallinity of the PVDF after the incorporation of the Cu2O nanoparticles was achieved. The Cu2O/PVDF nanocomposites exhibited excellent cyclic mechanical property compared to the neat PVDF. The introduction of 5 wt% Cu2O nanoparticles into the PVDF composites resulted in remarkable increase of the dielectric constant by 13 times while the dielectric loss was very low. A device based on Al/5 wt% Cu2O doped PVDF/Pt structure is developed. This device shows ferroelectric hysteresis with butterfly like shape and exhibited remanent polarization of 11.2 mu C/cm(2) with coercive field of 49 MV/m. These superior properties enable the developed Cu2O/PVDF nanocomposite films to be a potential candidate in the field of ferroelectric organic electronic memory devices. (C) 2017 Elsevier B.V. All rights reserved.
机译:通过铸造技术开发氧化铜纳米颗粒负载聚(偏二氟乙烯)(PVDF)纳米复合材料,浓度为1至9wt%。检查Cu2O纳米颗粒对PVDF的结构,热,机械和介电性能的影响。扫描电子显微镜(Fe-SEM)揭示了Cu2O纳米颗粒的井分散体,其高达5wt%。 X射线衍射(XRD)图案和红外光谱(FTIR)测量暗示,将Cu2O纳米颗粒包含到PVDF基质中,导致整洁PVDF的非极性半晶α相的变换至高度结晶极性β相。此外,达到了Cu 2 O纳米颗粒后PVDF的热稳定性和结晶度的增加。与整齐的PVDF相比,Cu2O / PVDF纳米复合材料表现出优异的环状机械性能。将5wt%Cu 2 O纳米颗粒引入PVDF复合材料中,导致介电常数显着增加13倍,而介电损耗非常低。开发了一种基于Al / 5wt%Cu2O掺杂PVDF / PT结构的装置。该装置显示蝴蝶形状的铁电滞后,并具有11.2μc/ cm(2)的熔化极化,矫顽磁场49mV / m。这些优异的性质使得开发的Cu2O / PVDF纳米复合膜成为铁电有机电子存储器件领域的潜在候选者。 (c)2017 Elsevier B.v.保留所有权利。

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