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首页> 外文期刊>Crystal growth & design >Effect of growth rate history on current crystal growth. 2. Crystal growth of sucrose, Al(SO4)(2)center dot 12H(2)O, KH2PO4, and K2SO4
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Effect of growth rate history on current crystal growth. 2. Crystal growth of sucrose, Al(SO4)(2)center dot 12H(2)O, KH2PO4, and K2SO4

机译:生长速率历史对当前晶体生长的影响。 2.蔗糖,Al(SO4)(2)中心点12H(2)O,KH2PO4和K2SO4的晶体生长

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摘要

The current study investigated a potential mechanism of growth rate dispersion (GRD) by determining the effect of a crystal's "growth rate history" on its current crystal growth, for sucrose, potash alum, potassium dihydrogen phosphate (KDP), and potassium sulfate crystals, using a combination of growth kinetic analysis and surface analysis via atomic force microscopy (AFM) and scanning electron microscopy (SEM). The growth history of a crystal had a significant effect on the future crystal growth rate: if a crystal had a period of high growth in a high supersaturation environment, the subsequent growth of the crystal in a lower supersaturation had a lower rate than a crystal that had been kept in the lower supersaturation environment. These results can be explained by the effect of high growth rates on the growing surface of a crystal: crystals grown in high supersaturation solutions had a rougher surface (on a macroscopic rather than molecular scale) than those grown in low supersaturation solutions. This phenomenon occurs if growth occurs above a critical level of the supersaturation, which we term the roughening transition. The level of GRD is shown to be related to the surface energy of the crystal, with high surface energy species also displaying higher levels of growth rate dispersion at the same relative supersaturation.
机译:当前的研究通过确定晶体的“生长速率历史”对其蔗糖,钾肥明矾,磷酸二氢钾(KDP)和硫酸钾晶体的“生长速率历史”对其当前晶体生长的影响,研究了生长速率分散(GRD)的潜在机理,通过原子力显微镜(AFM)和扫描电子显微镜(SEM)结合使用生长动力学分析和表面分析。晶体的生长历史对未来晶体的生长速率具有重大影响:如果晶体在高过饱和度的环境中具有一段高生长的时间,则随后在较低的过饱和度中生长的晶体的生长速率将低于晶体的生长速率。被保留在较低的过饱和环境中。这些结果可以用高生长速率对晶体生长表面的影响来解释:在高过饱和溶液中生长的晶体比在低过饱和溶液中生长的晶体具有更粗糙的表面(在宏观上而非分子尺度上)。如果增长发生在过饱和的临界水平以上(我们称之为粗糙化过渡),就会发生这种现象。已显示GRD的水平与晶体的表面能有关,在相同的相对过饱和度下,高表面能种类也显示出较高水平的生长速度分散。

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