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Direct Synthesis, Growth Mechanism, and Optical Properties of 3D AlN Nanostructures with Urchin Shapes

机译:具有Urchin形状的3D AlN纳米结构的直接合成,生长机理和光学性质

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摘要

Aluminum nitride (AlN) nanostructures have shown novel physical and chemical properties that are essential for technological applications. We report a vapor-solid growth of novel three-dimensional (3D) AlN urchin-like nanostructure in DC arc plasma via the direct reaction between Al vapor and N-2 gas without any catalyst or template. The as-prepared 3D AlN nanostructures which have urchin-like shapes consist of numerous microdaggers with sharp tips and lengths of up to several micrometers and widths of 0.5-2 mu m. A growth mechanism of AlN nanostructures with urchin shapes was suggested and explained in detail. The optical properties of the AIN nanostructures with urchin shapes were also studied with photoluminescence spectrum, which reveals a broad emission, suggesting potential applications in electronic and optoclectronic nanodevices.
机译:氮化铝(AlN)纳米结构已显示出新颖的物理和化学性质,这对于技术应用而言至关重要。我们报告直流电弧弧等离子体中的新型三维(3D)AlN urchin状纳米结构的汽固生长,通过Al蒸气和N-2气体之间的直接反应而没有任何催化剂或模板。所制备的具有海胆状形状的3D AlN纳米结构由许多带有尖锐尖端的微匕首组成,其长度高达几微米,宽度为0.5-2μm。提出并详细解释了具有顽童形状的AlN纳米结构的生长机理。还用光致发光光谱研究了具有顽童形状的AIN纳米结构的光学性质,该光谱揭示了广泛的发射,表明在电子和光电纳米器件中的潜在应用。

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