首页> 外文期刊>ACS Sustainable Chemistry & Engineering >Interfacial Construction of Zero-Dimensional/One-Dimensional g-C3N4 Nanoparticles/TiO2 Nanotube Arrays with Z-Scheme Heterostructure for Improved Photoelectrochemical Water Splitting
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Interfacial Construction of Zero-Dimensional/One-Dimensional g-C3N4 Nanoparticles/TiO2 Nanotube Arrays with Z-Scheme Heterostructure for Improved Photoelectrochemical Water Splitting

机译:Z-Schement Z-SchementureStructure的零尺寸/一维G-C3N4纳米粒子/ TiO2纳米管阵列的互晶施工,用于改善光电化学水分裂

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摘要

The OD/1D graphitic carbon nitride (g-C3N4)/TiO2 heterostructures containing an interfacial oxygen vacancy layer were sequentially constructed by anodic oxidation, NaBH4 reduction, and vapor deposition methods. Visible light absorption was significantly improved via construction of the interfacial oxygen vacancy layer and coupling with g-C3N4. Thus, OD/1D g-C3N4/OV-TiO2 showed an optimal photocurrent density as high as 0.72 mA/cm(2) at 1.23 V versus reversible hydrogen electrode under visible light irradiation, 8-fold higher than the data of g-C3N4/TiO2 without interfacial oxygen vacancy layer. Electrochemical impedance spectroscopy (EIS) revealed the OD/1D g-C3N4/OV-TiO2 heterostructured photoanode showed the lowest charge transfer resistance among all the prepared photoanodes. This improved photoelectrochemical (PEC) performance could be attributed to the generation of Z-scheme heterostructure via construction of an interfacial oxygen vacancy layer between TiO2 and g-C3N4. This interfacial layer can promote charge carrier separation and transportation processes. The formation of this Z-scheme heterostructure was confirmed by hydroxyl fluorescence capture characterization and spin-polarized density functional theory calculations. We believe that our work can help rationally design and construct highly efficient heterostructured photoanodes for PEC water splitting applications.
机译:通过阳极氧化,NABH4还原和气相沉积方法顺序构建含有界面氧空位层的OD / 1D石墨碳氮化物(G-C3N4)/ TiO2异质结构。通过界面氧空位层和与G-C3N4的偶联显着改善可见光吸收。因此,OD / 1D G-C3N4 / OV-TiO2显示出高达0.72mA / cm(2)的最佳光电性密度,在可见光照射下的1.23V与可逆氢电极,比G-C3N4的数据高8倍/ TiO2没有界面氧空位层。电化学阻抗谱(EIS)显示OD / 1D G-C3N4 / OV-TiO2异质结构光阳极显示所有制备的光桥之间的最低电荷转移电阻。这种改进的光电化学(PEC)性能可归因于通过在TiO 2和G-C3N4之间的界面氧空位层的构建产生Z样品异质结构。这种界面层可以促进电荷载流子分离和运输过程。通过羟荧光捕获表征和旋转极化密度函数理论计算证实了该Z方案异质结构的形成。我们相信,我们的工作可以帮助合理设计,并为PEC水分裂应用构建高效的异质结构光电彩色。

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