Circular Double‐Patterning Lithography Using a Block Copolymer Template and Atomic Layer Deposition

Wan Zhixin; Lee Ha Jin; Kim Hyun Gu; Jo Gyeong Cheon; Park Woon Ik; Ryu Seung Wook; Lee Han‐Bo‐Ram; Kwon Se‐Hun

摘要

Abstract > A novel and feasible methodology is developed to fabricate well‐ordered, freestanding 1D n‐ZnO/p‐Si nanotube (NT) and nanorod (NR) arrays via double‐patterning technology with block copolymer (BCP) self‐assembly, atomic layer deposition (ALD), and inductively coupled plasma (ICP) dry etching. To obtain the well‐ordered NT pattern, a self‐assembled, Si‐containing poly(styrene‐ block ‐4‐( tert ‐butyldimethylsilyl)oxystyrene) BCP on an SU‐8/p‐Si wafer is employed as a template. After n‐ZnO deposition on the self‐assembled BCP template by ALD, an ICP etching process is performed to produce well‐defined, independent n‐ZnO/p‐Si NT arrays. The insights into the nanoarrays presented here are directly applicable to the fabrication of n‐ZnO/p‐Si NT/NR patterns and Si NT/NR patterns by precisely controlling the ALD cycles and ICP etching time. The electrical properties of a single n‐ZnO/p‐Si NT are measured by conductive atomic force microscopy, and the results show the typical rectifying behavior of a nanodiode with superior electrical properties. This simple and useful approach provides a very convenient route for fabricating high‐density nanodiode patterns. Additionally, the possibility of various applications is confirmed by simple analyses, including examinations of contact angle and reflectance. Furthermore, the wettability and antireflection properties can be controlled by changing the nanoarray morphology. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 开发了一种新颖可行的方法，以通过具有嵌段共聚物（BCP）自组装，原子层沉积，原子层沉积（ALD），电感耦合等离子体（ICP）干蚀刻。为了获得良好的NT图案，一种自组装，含Si的聚（苯乙烯 - 块</ i> -4-（ tert </ i> -Butyldimethylyl）氧苯乙烯）SU-8 / P-Si晶片上的BCP用作模板。在通过ALD的自组装BCP模板上进行N-ZnO沉积后，进行ICP蚀刻工艺以产生良好定义的独立的N-ZnO / P-Si NT阵列。这里呈现的纳米阵列的见解通过精确地控制ALD循环和ICP蚀刻时间，直接适用于N-ZnO / P-SiNT / NR图案和SiNT / NR图案的制造。通过导电原子力显微镜测量单个N-ZnO / P-SiNT的电性能，结果显示了纳米末端具有优异电性能的典型整流行为。这种简单且有用的方法提供了一种非常方便的制造高密度纳米码图案的途径。另外，通过简单的分析证实了各种应用的可能性，包括接触角和反射率的检查。此外，可以通过改变纳米阵列形态来控制润湿性和抗反射特性。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2018年第16期</span><b style="margin: 0 2px;">|</b><span>共9页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Wan Zhixin&option=202" target="_blank" rel="nofollow">Wan Zhixin;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Ha Jin&option=202" target="_blank" rel="nofollow">Lee Ha Jin;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim Hyun Gu&option=202" target="_blank" rel="nofollow">Kim Hyun Gu;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Jo Gyeong Cheon&option=202" target="_blank" rel="nofollow">Jo Gyeong Cheon;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Park Woon Ik&option=202" target="_blank" rel="nofollow">Park Woon Ik;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ryu Seung Wook&option=202" target="_blank" rel="nofollow">Ryu Seung Wook;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Han‐Bo‐Ram&option=202" target="_blank" rel="nofollow">Lee Han‐Bo‐Ram;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kwon Se‐Hun&option=202" target="_blank" rel="nofollow">Kwon Se‐Hun;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>School of Materials Science and EngineeringPusan National UniversityBusan 46241 South Korea;</p> <p>School of Materials Science and EngineeringPusan National UniversityBusan 46241 South Korea;</p> <p>Department of Materials Science and EngineeringIncheon National UniversityIncheon 22012 South Korea;</p> <p>Department of ChemistryKorea Advanced Institute of Science and Technology (KAIST)Daejeon 305701 South Korea;</p> <p>Electronic Convergence Materials DivisionKorea Institute of Ceramic Engineering and Technology (KICET)101 Soho‐ro Jinju 52851 Republic of Korea;</p> <p>SK Hynix2091 Gyeongchung‐Daero Bubal‐rub Icheon‐si Gyeonggi‐do Incheon 17336 South Korea;</p> <p>Department of Materials Science and EngineeringIncheon National UniversityIncheon 22012 South Korea;</p> <p>School of Materials Science and EngineeringPusan National UniversityBusan 46241 South Korea;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=atomic layer deposition (ALD)&option=203" rel="nofollow">atomic layer deposition (ALD);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=block copolymer (BCP)&option=203" rel="nofollow">block copolymer (BCP);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=double‐patterning (DP) lithography&option=203" rel="nofollow">double‐patterning (DP) lithography;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=n‐ZnO/p‐Si NTs/NRs&option=203" rel="nofollow">n‐ZnO/p‐Si NTs/NRs;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=self‐assembly&option=203" rel="nofollow">self‐assembly;</a> </p> <div class="translation"> 机译：原子层沉积（ALD）;嵌段共聚物（BCP）;双图案化（DP）光刻;N-ZnO / P-Si NTS / NRS;自组装; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704022435747.html">Atomic Layer Deposition: Circular Double‐Patterning Lithography Using a Block Copolymer Template and Atomic Layer Deposition (Adv. 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