Direct Growth of MoS        <sub >2</sub>2        and WS        <sub >2</sub>2        Layers by Metal Organic Chemical Vapor Deposition

Cwik Stefan; Mitoraj Dariusz; Mendoza Reyes Oliver; Rogalla Detlef; Peeters Daniel; Kim Jiyeon; Schütz Hanno Maria; Bock Claudia; Beranek Radim; Devi Anjana

摘要

Abstract > For the growth of 2D transition metal dichalcogenides, such as molybdenum (MoS <sub>2</sub> ) and tungsten disulfides (WS <sub>2</sub> ), metalorganic chemical vapor deposition (MOCVD) routes are favorable due to their superior scalability, the possibility to tune the processing temperatures by a proper choice of reactants thus avoiding the need for a postdeposition treatment. Herein, the first example of a promising MOCVD route for the direct fabrication of MoS <sub>2</sub> and WS <sub>2</sub> layers under moderate process conditions is reported. This straightforward route is successfully realized by the combination of metalorganic precursors of Mo or W bearing the amidinato ligand with just elemental sulfur. The formation of stoichiometric hexagonal 2H‐MoS <sub>2</sub> and 2H‐WS <sub>2</sub> is demonstrated which is confirmed by Raman, X‐ray diffraction, and X‐ray photoelectron spectroscopy studies. The deposited layers are evaluated for their electrocatalytic activity in hydrogen evolution reaction as a proof of principle for application in water splitting devices. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 对于2D过渡金属二甲基化物的生长，如钼（MOS <sub> 2 </ sub> ）和钨二硫化物（WS <sub> 2 </ sub> ), metalorganic chemical vapor deposition (MOCVD) routes are favorable due to their superior scalability, the possibility to tune the processing temperatures by a proper choice of reactants thus avoiding the need for a postdeposition treatment.这里，用于直接制造MOS的有希望的MOCVD途径的第一示例 <sub> 2 </ sub> 和ws. <sub> 2 </ sub> 报告了中等过程条件下的层。这种直接的途径通过Mo或W的金属有机前体的组合成功地实现了氨基氨基配体，仅具有元素硫。形成化学计量六边形2H-MOS <sub> 2 </ sub> 和2h-ws <sub> 2 </ sub> 被证明由拉曼，X射线衍射和X射线光电子能谱研究证实。评价沉积的层，在氢换气中评价其电催化活性，作为水分裂装置应用原理的证据。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2018年第16期</span><b style="margin: 0 2px;">|</b><span>共11页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Cwik Stefan&option=202" target="_blank" rel="nofollow">Cwik Stefan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Mitoraj Dariusz&option=202" target="_blank" rel="nofollow">Mitoraj Dariusz;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Mendoza Reyes Oliver&option=202" target="_blank" rel="nofollow">Mendoza Reyes Oliver;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Rogalla Detlef&option=202" target="_blank" rel="nofollow">Rogalla Detlef;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Peeters Daniel&option=202" target="_blank" rel="nofollow">Peeters Daniel;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim Jiyeon&option=202" target="_blank" rel="nofollow">Kim Jiyeon;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Schütz Hanno Maria&option=202" target="_blank" rel="nofollow">Schütz Hanno Maria;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Bock Claudia&option=202" target="_blank" rel="nofollow">Bock Claudia;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Beranek Radim&option=202" target="_blank" rel="nofollow">Beranek Radim;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Devi Anjana&option=202" target="_blank" rel="nofollow">Devi Anjana;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Inorganic Materials ChemistryRuhr‐University BochumUniversit?tsstr. 150 44801 Bochum Germany;</p> <p>Institute of ElectrochemistryUlm UniversityAlbert‐Einstein‐Allee 47 89069 Ulm Germany;</p> <p>Institute of ElectrochemistryUlm UniversityAlbert‐Einstein‐Allee 47 89069 Ulm Germany;</p> <p>RUBIONRuhr‐University BochumUniversit?tsstr. 150 44801 Bochum Germany;</p> <p>Inorganic Materials ChemistryRuhr‐University BochumUniversit?tsstr. 150 44801 Bochum Germany;</p> <p>Inorganic Materials ChemistryRuhr‐University BochumUniversit?tsstr. 150 44801 Bochum Germany;</p> <p>Institute of ElectrochemistryUlm UniversityAlbert‐Einstein‐Allee 47 89069 Ulm Germany;</p> <p>Microsystems TechnologyRuhr‐University BochumUniversit?tsstr. 150 44801 Bochum Germany;</p> <p>Institute of ElectrochemistryUlm UniversityAlbert‐Einstein‐Allee 47 89069 Ulm Germany;</p> <p>Inorganic Materials ChemistryRuhr‐University BochumUniversit?tsstr. 150 44801 Bochum Germany;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=chemical vapor deposition&option=203" rel="nofollow">chemical vapor deposition;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=molybdenum disulfide&option=203" rel="nofollow">molybdenum disulfide;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=photoelectrochemical water splitting&option=203" rel="nofollow">photoelectrochemical water splitting;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=transition metal dichalcogenides&option=203" rel="nofollow">transition metal dichalcogenides;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=tungsten disulfide&option=203" rel="nofollow">tungsten disulfide;</a> </p> <div class="translation"> 机译：化学气相沉积;二硫化钼;光电化学水分裂;过渡金属二硫代甲基化物;钨二硫化物; </div> </li> </ul> </div> </div> <div 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href="/academic-journal-cn_chinese-journal-liquid-crystals-displays_thesis/0201254021682.html">不同衬底上氧化锌薄膜的金属有机化学气相沉积方法生长</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王超&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 王超</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=杨小天&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,杨小天</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=唐魏&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,唐魏</a> <span> <a href="/journal-cn-15857/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 液晶与显示 </a> </span> <span> . 2009</span><span>,第005期</span> </span> </div> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/academic-journal-cn_spectroscopy-spectral-analysis_thesis/0201232917979.html">金属有机化学气相沉积法在欧泊空隙中生长磷化铟的影响因素</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=谭春华&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 谭春华</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=范广涵&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,范广涵</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=黄旭光&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,黄旭光</a> <span> <a href="/journal-cn-11127/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 光谱学与光谱分析 </a> </span> <span> . 2008</span><span>,第012期</span> </span> </div> </li> <li> <div> <b>6. </b><a class="enjiyixqcontent" href="/academic-conference-cn_meeting-14559_thesis/020221175095.html">金属有机化学气相沉积法制备Al掺杂ZnO透明导电膜</a> <b>[C]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=谢春燕&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 谢春燕</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=张跃&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,张跃</a> <span> <a href="/conference-cn-14559/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 全国功能陶瓷薄膜和涂层材料研讨会 </a> <span> <span> . 2009</span> </span> </div> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020314019847.html">金属有机化学气相沉积法制备氧化钇涂层的探索研究</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=付正&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 付正</a> <span> . 2006</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120892741.html">金属有机化学气相沉积生长GaN基发光晶体膜的方法</a> <b>[P]</b> . <span> 中国专利： CN101736400B </span> <span> . 2012.02.29</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/06120105980615.html">金属有机化学气相沉积生长GaN基发光晶体膜的方法</a> <b>[P]</b> . <span> 中国专利： CN101736400A </span> <span> . 2010-06-16</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130456312838.html">N-TYPE DOPING TO COMPOUND SEMICONDUCTOR, CHEMICAL BEAM DEPOSITION USING THE SAME, METAL ORGANIC MOLECULAR BEAM EPITAXIAL GROWTH, GAS SOURCE MOLECULER BEAM EPITAXIAL GROWTH, AND METAL ORGANIC VAPOR PHASE DEPOSITION</a> <b>[P]</b> . <span> 外国专利：  JPH09171966A </span> <span> . 1997-06-30</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：N型掺杂到复合半导体中，使用相同的化学束沉积，金属有机分子束表观生长，气态分子束束表观生长，金属有机气相沉积 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130418487207.html">The substrate support organicity metal chemical compound restoration device for vapor phase growth, the organicity metal chemical compound for solid-state vapor phase growth is enclosed at manufacturing method of the substrate support organicity metal chemical compound for vapor phase growth and</a> <b>[P]</b> . <span> 外国专利：  JP5431649B2 </span> <span> . 2014-03-05</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：用于气相生长的基板支撑有机金属化合物修复装置，用于气相生长的基板支撑有机金属化合物的制造方法封装了用于固态气相生长的有机金属化合物，并且 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130440858574.html">Metal organic chemical vapor phase growth method and atomic layer vapor deposition method of metal acid nitride and metal silicon acid nitride</a> <b>[P]</b> . <span> 外国专利：  JP2005534173A </span> <span> . 2005-11-10</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> 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Direct Growth of MoS 22 and WS 22 Layers by Metal Organic Chemical Vapor Deposition

摘要

Direct Growth of MoS ₂2 and WS ₂2 Layers by Metal Organic Chemical Vapor Deposition