Decreasing Defect‐State Density of Al        <sub >2</sub>2        O        <sub >3</sub>3        /Ga        <i >          <sub>x</sub>                  <sub >x</sub>x                In        <sub >1?</sub>1?        <i >          <sub>x</sub>                  <sub >x</sub>x                As Device Interfaces with InO        <i >          <sub>x</sub>                  <sub >x</sub>x                Structures

M?kel? Jaakko; Tuominen Marjukka; Dahl Johnny; Granroth Sari; Yasir Muhammad; Lehti? Juha‐Pekka; Uusitalo Rami‐Roope; Kuzmin Mikhail; Punkkinen Marko; Laukkanen Pekka; Kokko Kalevi; Félix Roberto; Lastusaari Mika; Poloj?rvi Ville; Lyytik?inen Jari; Tukiainen Antti; Guina Mircea

摘要

Abstract > Control of defect densities at insulator/Ga <sub>x</sub> In <sub>1?</sub> <sub>x</sub> As interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi‐level pinning, and leakage currents. It is reported that a thin InO <sub>x</sub> interface layer is useful to limit the formation of these defects by showing effect of InO <sub>x</sub> on quantum efficiency of Ga <sub>0.45</sub> In <sub>0.55</sub> As detector and on photoluminescence of GaAs. A study of the Al <sub>2</sub> O <sub>3</sub> /GaAs interface via hard X‐ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InO <sub>x</sub> incorporation: the InO <sub>x</sub> sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 绝缘子/ GA的缺陷密度控制 <sub> x </ sub> </ i> 在 <sub> 1？</ sub> <sub> x </ sub> </ i> 由于界面对于晶体管和红外检测器等各种器件的最佳操作是必不可少的，以抑制例如非阵列重组，费米级钉扎和漏电流。据报道，薄薄的ino <sub> x </ sub> </ i> 界面层是有用的，可以通过显示INO的效果来限制这些缺陷的形成 <sub> x </ sub> </ i> 关于GA的量子效率 <sub> 0.45 </ sub> 在 <sub> 0.55 </ sub> 作为检测器和GaAs的光致发光。对al的研究 <sub> 2 </ sub> O. <sub> 3 </ sub> / GaAs接口通过硬X射线同步rotron光电子谱透露通过这种有益INO引起的界面处的化学结构变化 <sub> x </ sub> </ i> 纳入：伊诺 <sub> x </ sub> </ i> 片材用作o防止GaAs氧化并随着债券破裂的氧化。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2017年第22期</span><b style="margin: 0 2px;">|</b><span>共7页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=M?kel? Jaakko&option=202" target="_blank" rel="nofollow">M?kel? Jaakko;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Tuominen Marjukka&option=202" target="_blank" rel="nofollow">Tuominen Marjukka;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Dahl Johnny&option=202" target="_blank" rel="nofollow">Dahl Johnny;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Granroth Sari&option=202" target="_blank" rel="nofollow">Granroth Sari;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Yasir Muhammad&option=202" target="_blank" rel="nofollow">Yasir Muhammad;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lehti? Juha‐Pekka&option=202" target="_blank" rel="nofollow">Lehti? Juha‐Pekka;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Uusitalo Rami‐Roope&option=202" target="_blank" rel="nofollow">Uusitalo Rami‐Roope;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kuzmin Mikhail&option=202" target="_blank" rel="nofollow">Kuzmin Mikhail;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Punkkinen Marko&option=202" target="_blank" rel="nofollow">Punkkinen Marko;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Laukkanen Pekka&option=202" target="_blank" rel="nofollow">Laukkanen Pekka;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kokko Kalevi&option=202" target="_blank" rel="nofollow">Kokko Kalevi;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Félix Roberto&option=202" target="_blank" rel="nofollow">Félix Roberto;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lastusaari Mika&option=202" target="_blank" rel="nofollow">Lastusaari Mika;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Poloj?rvi Ville&option=202" target="_blank" rel="nofollow">Poloj?rvi Ville;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lyytik?inen Jari&option=202" target="_blank" rel="nofollow">Lyytik?inen Jari;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Tukiainen Antti&option=202" target="_blank" rel="nofollow">Tukiainen Antti;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Guina Mircea&option=202" target="_blank" rel="nofollow">Guina Mircea;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Department of Physics and AstronomyUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Renewable EnergyHelmholtz‐Zentrum Berlin für Materialien und Energie GmbHHahn‐Meitner‐Platz 1 D‐14109 Berlin Germany;</p> <p>Department of ChemistryUniversity of TurkuFI‐20014 Turku Finland;</p> <p>Optoelectronics Research CentreTampere University of TechnologyFI‐33101 Tampere Finland;</p> <p>Optoelectronics Research CentreTampere University of TechnologyFI‐33101 Tampere Finland;</p> <p>Optoelectronics Research CentreTampere University of TechnologyFI‐33101 Tampere Finland;</p> <p>Optoelectronics Research CentreTampere University of TechnologyFI‐33101 Tampere Finland;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=defects&option=203" rel="nofollow">defects;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=GaAs&option=203" rel="nofollow">GaAs;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=HAXPES&option=203" rel="nofollow">HAXPES;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=interface&option=203" rel="nofollow">interface;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=oxide&option=203" rel="nofollow">oxide;</a> </p> <div class="translation"> 机译：缺陷;GaAs;HAXPES;界面;氧化物; </div> </li> </ul> </div> </div> <div class="literature cardcommon" id="literaturereference" style="display:none"> <div class="similarity "> <h3 class="all_title" id="enpatent111">引文网络</h3> <div class="referencetab clearfix"> <ul id="referencedaohang"> <li dataid="referenceul">参考文献</li> <li dataid="citationul">引证文献</li> <li dataid="commonreferenceul">共引文献</li> <li dataid="commoncitationul">同被引文献</li> <li dataid="tworeferenceul">二级参考文献</li> <li dataid="twocitationul">二级引证文献</li> </ul> </div> <div class="reference_details" id="referenceList"> <ul id="referenceul"></ul> <ul id="citationul"></ul> <ul id="commonreferenceul"></ul> <ul id="commoncitationul"></ul> <ul id="tworeferenceul"></ul> <ul id="twocitationul"></ul> </div> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704022433714.html">Decreasing Defect‐State Density of Al <sub >2</sub>2 O <sub >3</sub>3 /Ga <i > <sub>x</sub> <sub >x</sub>x In <sub >1?</sub>1? <i > <sub>x</sub> <sub >x</sub>x As Device Interfaces with InO <i > <sub>x</sub> <sub >x</sub>x Structures</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=M?kel? 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Decreasing Defect‐State Density of Al 22 O 33 /Ga x xx In 1?1? x xx As Device Interfaces with InO x xx Structures

摘要

Decreasing Defect‐State Density of Al ₂2 O ₃3 /Ga _x _xx In _1?1? _x _xx As Device Interfaces with InO _x _xx Structures