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Thermal contact resistance of different materials between 0.3 K and 4.5 K

机译:不同材料在0.3 K至4.5 K之间的热接触电阻

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The choice of a good bonding agent often depends on the temperature range of use and on its corresponding thermal contact resistance. Measurements obtained between 0.3 K and 4.5 K were made applying the steady state heat flow method across the interfaces of small crystals of quartz (SO_2) sandwiched by two copper blocks and attached with various types of contact materials. Below 1 K, we found that for one crystal attached with indium solder its thermal contact resistance was R_B~(-1) approx = 0.68Y~3 W/cm~2K. This value in comparison with those attached with a conductive and an insulating epoxies, turns to be the lowest.
机译:优质粘合剂的选择通常取决于使用温度范围及其相应的热接触电阻。使用稳态热流方法,在由两个铜块夹在中间并附着有各种接触材料的石英小晶体(SO_2)的界面上,进行0.3 K至4.5 K的测量。在1 K以下,我们发现对于一个用铟焊料附着的晶体,其热接触电阻为R_B〜(-1)大约= 0.68Y〜3 W / cm〜2K。与附着有导电和绝缘环氧树脂的那些相比,该值变为最低。

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