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Effect of electrical resistivity on ultrasonic attenuation in NpTe

机译:电阻率对NpTe中超声衰减的影响

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Ultrasonic attenuation due to electron-phonon interaction (EPI) has been computed in semimetallic sin-gle crystal neptunium telluride (NpTe) in low temperatures 5-80 K. For the same evaluation, we have also evaluated ultrasonic velocity, electronic viscosity and second order elastic constants (SOEC). The SOEC of NpTe have been evaluated using the Born model of ionic solid. The behaviour of ultrasonic atten-uation is quite similar to its inverse resistivity. The ultrasonic attenuation due to EPI is most significant at 40 K. Computed results of ultrasonic parameter have been compared and discussed.
机译:计算了在5-80 K低温下半金属单晶晶体碲化n(NpTe)中由于电子-声子相互作用(EPI)引起的超声衰减。对于相同的评估,我们还评估了超声速度,电子粘度和二阶弹性常数(SOEC)。 NpTe的SOEC已使用离子固体的Born模型进行了评估。超声波衰减的行为与其反电阻率非常相似。 EPI引起的超声衰减在40 K时最显着。已比较和讨论了超声参数的计算结果。

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