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The many flavours of halogen bonds – message from experimental electron density and Raman spectroscopy

机译:卤素键的许多味道 - 来自实验电子密度和拉曼光谱的消息

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Experimental electron‐density studies based on high‐resolution diffraction experiments allow halogen bonds between heavy halogens to be classified. The topological properties of the electron density in Cl…Cl contacts vary smoothly as a function of the interaction distance. The situation is less straightforward for halogen bonds between iodine and small electronegative nucleophiles, such as nitrogen or oxygen, where the electron density in the bond critical point does not simply increase for shorter distances. The number of successful charge–density studies involving iodine is small, but at least individual examples for three cases have been observed. ( a ) Very short halogen bonds between electron‐rich nucleophiles and heavy halogen atoms resemble three‐centre–four‐electron bonds, with a rather symmetric heavy halogen and without an appreciable σ hole. ( b ) For a narrow intermediate range of halogen bonds, the asymmetric electronic situation for the heavy halogen with a pronounced σ hole leads to rather low electron density in the (3,?1) critical point of the halogen bond; the properties of this bond critical point cannot fully describe the nature of the associated interaction. ( c ) For longer and presumably weaker contacts, the electron density in the halogen bond critical point is only to a minor extent reduced by the presence of the σ hole and hence may be higher than in the aforementioned case. In addition to the electron density and its derived properties, the halogen–carbon bond distance opposite to the σ hole and the Raman frequency for the associated vibration emerge as alternative criteria to gauge the halogen‐bond strength. We find exceptionally long C—I distances for tetrafluorodiiodobenzene molecules in cocrystals with short halogen bonds and a significant red shift for their Raman vibrations.
机译:基于高分辨率衍射实验的实验电子密度研究允许分类重卤素之间的卤素键。 CL ... CL触点中的电子密度的拓扑特性随着相互作用距离的函数而变化平滑。碘和小电动助性亲核试剂(例如氮气或氧气)之间的卤素键的情况不太直接,其中粘合临界点中的电子密度不仅仅增加距离而增加。涉及碘的成功充电密度研究的数量小,但至少观察到三种情况的单个例子。 (a)电子富含核酸和重卤素之间的非常短的卤素键类似三中心 - 四电子键,具有相当对称的重卤素,并且没有可观的σ孔。 (b)对于较窄的中间范围的卤素键,具有明显σ孔的重卤素的不对称电子情况导致卤素键(3,α1)临界点中的相当低的电子密度;该债券临界点的属性不能完全描述相关交互的性质。 (c)对于较长且可能是较弱的触点,卤素键临界点中的电子密度仅在σ孔的存在下减小的较小程度,因此可以高于上述情况。除了电子密度及其衍生性质之外,与Σ孔相对的卤素 - 碳键距离和相关振动的拉曼频率作为替代标准,以衡量卤素键合强度。我们发现具有短卤素键的COCrystals中的四氟吡啶苯苯苯胞烯分子的特别长的C-i距离,并为其拉曼振动显着的红移。

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