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机译:ZnO纳米纤维薄膜晶体管,具有低操作电压
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
Shandong Univ Sch Microelect Jinan 250100 Shandong Peoples R China;
Chinese Acad Sci State Key Lab Multiphase Complex Syst Inst Proc Engn Beijing 100190 Peoples R China;
Shandong Univ Sch Microelect Jinan 250100 Shandong Peoples R China;
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
Qingdao Univ Coll Phys &
Cultivat Base State Key Lab Qingdao 266071 Peoples R China;
City Univ Hong Kong Dept Mat Sci &
Engn Kowloon 999077 Hong Kong Peoples R China;
annealing; electrospinning; low-operating voltage; transistor; ZnO nanofiber;
机译:ZnO纳米纤维薄膜晶体管,具有低操作电压
机译:ZrO2栅极电介质ZnO基薄膜晶体管的阈值电压和性能
机译:具有栅极/漏极偏移的薄膜轮廓设计的ZnO薄膜晶体管,用于高压操作
机译:器件特性从薄膜晶体管的准静态电容电压特性开始-低温和高温多晶硅,非晶In-Ga-Zn-O,ZnO,聚合物-
机译:增强电解质门控晶体管的动态性能:朝向快速切换,低工作电压印刷电子产品
机译:带有原子层沉积ZnO电荷陷阱层的非晶In-Ga-Zn-O薄膜晶体管存储器的电压极性相关编程行为
机译:薄膜晶体管:ZnO纳米纤维薄膜晶体管,具有低工作电压(ADV。电子。Matter。1/2018)