InGaP Nano-pattern Structure Realized by Thermally Dewetted Au Nanoparticles and Anisotropic Dry Etchinig

摘要

Background: Optical reflection loss can be reduced more than 30% When multilayers ARC arc deposited on the optoelectronic devices surface. Besides that, sub-wavelength structures, which have a period sufficiently smaller than the wavelength of light, have been introduced as an antireflection layer to offer a new possibility to suppress the Fresnel reflection. Normally, e-bean and nano-imprint lithography techniques are used to create nano-scale etch mask patterns. Metallic nanoparticles, which can he formed by a thermal dewetting process of metal thin film without any nanolithography techniques, can he utilized as an etch mask for the nano structure fabrications. The nano-patterned structures were fabricated on a silicon nitride passivation layer of a GaInP/GaAs/Ge triple-junction solar cell and showed an enhancement of its performance due to improved optical transmission and current matching.