...
首页> 外文期刊>Contributions to Plasma Physics >Influence of bias magnetic field on the vacuum arc in double‐break vacuum circuit breakers
【24h】

Influence of bias magnetic field on the vacuum arc in double‐break vacuum circuit breakers

机译:双断式真空断路器偏压对真空电弧的影响

获取原文
获取原文并翻译 | 示例
           

摘要

>When double‐break vacuum circuit breakers (VCBs) interrupt the fault current, the series arc will generate their individual magnetic fields in different breaks. The magnetic field in one break will influence the arc in another break if the magnetic field is strong enough or the two breaks are very close. In this case, an interactive magnetic field effect happens. This field is also called the bias magnetic field (BMF). BMF can cause anode erosion and affect the performance at current zero. The distribution of BMF and the optimal configuration of the double‐break VCBs were obtained by the electromagnetic field simulation using the Ansoft Maxwell software. Based on the simulated magnetic field data, in the experiments, the interaction between the series vacuum arcs in double‐break VCBs was equivalent to the interaction between a single vacuum arc and the magnetic field generated by a Helmholtz coil. A high‐speed CMOS camera was used to record the trajectory of the vacuum arc plasma under different BMFs with different types of contacts. The results show the BMF can increase the arc voltage, and the arc becomes unstable. When the BMF becomes stronger, the arc voltage increases, and the arc becomes more unstable. In addition, for different types of contacts, the development process of the arc and the influence level are different under the same BMF. For a Wan‐type transverse magnetic field (TMF) contact or strong BMF, metal sputtering is evident and anode erosion becomes serious. For a cup‐type axial magnetic field (AMF) contact, the influence of BMF on the series arc plasma in double‐break VCBs is less than that of the Wan‐type TMF contact. The results of this work may be helpful for the design of compact double‐break VCBs.
机译:

当双击真空断路器(VCB)中断故障电流时,串联弧将在不同的断裂中产生各个磁场。如果磁场足够强或两个断裂非常接近,则一个断裂中的磁场将在另一个断裂中影响弧。在这种情况下,发生交互式磁场效果。该字段也称为偏置磁场(BMF)。 BMF可能导致阳极侵蚀并影响当前零时的性能。通过使用ANSoft Maxwell软件的电磁场仿真获得BMF的分布和双衰频VCB的最佳配置。基于模拟磁场数据,在实验中,双断液VCB中的串联真空弧之间的相互作用等同于单个真空弧和由亥姆霍兹线圈产生的磁场之间的相互作用。使用高速CMOS相机用于在具有不同类型的触点的不同BMF下记录真空电弧等离子体的轨迹。结果显示BMF可以增加电弧电压,电弧变得不稳定。当BMF变得更强时,电弧电压增加,并且电弧变得更不稳定。另外,对于不同类型的触点,在相同的BMF下,电弧的开发过程和影响水平不同。对于WAN型横向磁场(TMF)接触或强BMF,金属溅射是明显的,并且阳极腐蚀变得严重。对于杯式轴向磁场(AMF)触点,BMF对双突变VCBS中串联电弧等离子体的影响小于WAN型TMF接触。这项工作的结果可能有助于设计紧凑的双破VCBS。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号