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Theoretical study of Sn adsorbed on the MgO(100) surface with defects

机译:用缺陷的MgO(100)表面吸附Sn的理论研究

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摘要

In this study, the adsorption of Sn atom at various sites on the MgO(100) surface was characterized using a theoretical approach based on density functional theory calculations. Both regular adsorption centers (O~(2-) and Mg~(2+)) and defects (such as neutral and charged O and Mg vacancies) were considered. Several key parameters for these sites with the adsorbed Sn atom were determined to provide its geometric, energetic, and electronic characterization. The interaction between Sn and the Mg vacancy sites is very strong and is associated with a relatively small distance of the adsorbed Sn atom from the surface and with a large electronic charge transfer from Sn to the surface. A much smaller strength of Sn atom adsorption is observed for the O vacancies and regular sites. Among them, the F_s~0 center binds the Sn atom strongest and, in consequence, this atom acquires a significant amount of electronic charge.
机译:在该研究中,使用基于密度泛函理论计算的理论方法,表征了MgO(100)表面上各个部位的Sn原子的吸附。 定期吸附中心(O〜(2-)和Mg〜(2+)和缺陷被认为是考虑的(如中性和带电的O和MG空位)。 确定具有吸附SN原子的这些位点的几个关键参数,以提供其几何,精力充沛和电子表征。 Sn和Mg空位位点之间的相互作用非常坚固,与从表面的吸附Sn原子的相对较小的距离相关联,并且从Sn到表面的大型电子电荷转移。 对于O空缺和常规部位,观察到SN原子吸附的强度更小。 其中,F_S〜0中心绑定了SN原子最强,因此,该Atom获取大量的电子电荷。

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