Facile low-temperature approach to tin-containing ZnO nanocrystals with tunable tin concentrations using heterobimetallic Sn/Zn single-source precursors

摘要

Stannyl-substituted [(RZn)4(OR′)4] cubanes with different tincontaining alkoxy groups [Ph3SnOZnMe] (1), [Ph 3SnOZnEt] (2), [Me3SnOZntBu] (3), and [Ph 3SnOZntBu] (4) are easily accessible by Br?nsted acid-base reaction of the corresponding triorganotin hydroxides with ZnMe2, ZnEt2, and Zn(tBu)2, respectively. All new compounds 1-4 were characterized by various spectroscopic methods and the structures of 1 and 3 were confirmed by single-crystal X-ray diffraction analysis. The thermal degradation of the precursors 1-4 under dry synthetic air (20% O2, 80%N2) was studied and the final oxide materials were characterized by employing powder X-ray diffraction (PXRD) analysis, inductively coupled plasma-optical emission spectrometry (ICP-OES), transmission and scanning electron microscopy (SEM and TEM), energy dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). Remarkably, compounds 1 and 2 proved to be suitable as single-source precursors (SSPs) for the efficient preparation of tin-doped ZnO nanoparticles with tunable tin concentrations as a promising system for steering and improving the optoelectronic properties of tin-doped ZnO. Using 3 as SSP furnishes tin-containing ZnO materials with good electron mobilities at relatively low processing temperatures (350 °C) for thin-film transistor (TFT) applications. All the thin films of tin-doped ZnO prepared by spin-coating on silicon wafers are of great homogeneity and amorphous structure, which is promising for future applications in the field of transparent conducting oxides (TCOs).