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首页> 外文期刊>ChemNanoMat >Interlayer Doping in Layered Vanadium Oxides for Low-cost Energy Storage: Sodium-ion Batteries and Aqueous Zinc-ion Batteries
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Interlayer Doping in Layered Vanadium Oxides for Low-cost Energy Storage: Sodium-ion Batteries and Aqueous Zinc-ion Batteries

机译:层间掺杂在层状钒氧化物中,用于低成本储能:钠离子电池和锌离子电池水溶液

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摘要

Advantages concerns about abundant resources, low cost and high safety have promoted sodium-ion batteries (SIBs) and aqueous zinc-ion batteries (AZIBs) as the most promising candidates for next generation of low-cost large-scale energy storage. However, the state-of-the-art cathode materials are far from meeting the commercial requirements. Considering the unique open framework, layered vanadium oxides have attracted wide attention due to the high energy density and power density, while they also face critical issues such as low stability and sluggish diffusion kinetics. The interlayer doping defects, as the most common method modulating layered materials, are believed to solve these problems which will be highlighted in this review. Firstly, the characteristics and current states of various vanadium oxides in SIBs and AZIBs are summarized. Then, the research efforts related to different types of interlayer doping defects, including ionic, molecular doping, etc., are discussed. Finally, it is pointed out that it is not enough to merely achieve satisfactory performances. Hence, some perspectives about the deep understanding and interrelationship are provided for the subsequent rational design of defective layered vanadium oxides for low-cost energy storage systems.
机译:优点涉及丰富资源,低成本和高安全性促进了钠离子电池(SIB)和锌离子电池(AZIB)作为下一代低成本大型能量存储的最有希望的候选者。然而,最先进的阴极材料远远达到商业要求。考虑到独特的开放框架,分层钒氧化物由于高能量密度和功率密度而引起了广泛的关注,而它们也面临着低稳定性和缓慢扩散动力学等关键问题。作为最常见的方法调制层状材料的层间掺杂缺陷被认为解决了在本综述中突出的这些问题。首先,总结了SIBs和Azibs中各种钒氧化物的特性和当前状态。然后,讨论了与不同类型的中间层掺杂缺陷相关的研究工作,包括离子,分子掺杂等。最后,指出它不足以实现令人满意的表现。因此,提供了关于低成本储能系统的缺陷层钒氧化物的随后理性设计的深层理解和相互关系的一些观点。

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