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首页> 外文期刊>ChemNanoMat >Surface Characterizations and Selective Etching of Sr-Rich Segregation on Top of SrVO3 Thin-Films Grown by Pulsed Laser Deposition
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Surface Characterizations and Selective Etching of Sr-Rich Segregation on Top of SrVO3 Thin-Films Grown by Pulsed Laser Deposition

机译:通过脉冲激光沉积生长的SRVO3薄膜顶部的SRVO3薄膜顶部的表面特征和选择性蚀刻

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摘要

Since SrVO3 (SVO) can be used as a highly conductive material for perovskite heterostructures, the control of surface morphology and chemistry of such thin-films are essential. Using pulsed laser deposition, two distinct topographies can be produced. Thus, by tuning oxygen pressure in the growth chamber during cooling, smooth or partially covered by self-oriented Sr3V2O8 nanorods surfaces can be grown. This study manages to correlate the two typical topographies, revealed by atomic force microscopy (AFM), with their chemical compositions obtained by X-ray photoelectron spectroscopy (XPS). At first, a model describes their initial surface chemistry through the Sr/V cationic ratio and the (Sr+V)/O-ox ratio. Furthermore, using sputter-depth profiling, post-thermal treatments and wet chemical etching, SVO thin-film chemical compositions are extensively studied. We demonstrate that they are composed of stoichiometric SVO phase covered by Sr-rich layer on top. Finally, treatment in water for 180 seconds helps to remove Sr-rich phases. Sr3V2O8 nanorods are found selectively dissolved leaving a surface nano-imprint. Moreover, on smooth SVO surfaces, a balanced Sr/V cationic ratio of 1.0 +/- 0.1 is obtained. These results appear very promising for SVO thin-films surface preparation and further development as electrodes for electronic devices.
机译:由于SRVO3(SVO)可以用作钙钛矿异质结构的高导电材料,因此这种薄膜的表面形态和化学的控制是必不可少的。使用脉冲激光沉积,可以生产两个不同的拓扑。因此,通过在冷却期间调节生长室中的氧气压力,可以生长由自定向的SR3V2O8纳米棒表面的光滑或部分覆盖。该研究设法与原子力显微镜(AFM)透露的两个典型的拓扑,其化学组合物具有通过X射线光电子谱(XPS)获得的。首先,模型通过SR / V阳离子比和(SR + V)/ O-OX比例描述其初始表面化学。此外,使用溅射深度分析,热处理和湿化学蚀刻,SVO薄膜化学组合物被广泛研究。我们证明它们由顶部富含SR层的化学计量SVO相组成。最后,在水中处理180秒有助于去除富含SR的阶段。发现SR3V2O8纳米棒被选择性地溶解留下表面纳米印记。此外,在光滑的SVO表面上,获得的平衡Sr / V阳离子比为1.0 +/- 0.1。这些结果对于SVO薄膜表面制备以及作为电子设备的电极的进一步发展表示非常有前途。

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  • 来源
    《ChemNanoMat》 |2019年第5期|共8页
  • 作者单位

    Univ Paris Saclay CNRS Univ Versailles St Quentin En Yvelines ILV 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay CNRS Univ Versailles St Quentin En Yvelines ILV 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay CNRS Univ Versailles St Quentin En Yvelines Grp Etud Matiere Condensee GEMaC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Caen Normandie CNRS ENSICAEN Lab Cristallog &

    Sci Mat CRISMAT 6 Blvd Marechal Juin F-14050 Caen France;

    Univ Paris Saclay CNRS Univ Versailles St Quentin En Yvelines Grp Etud Matiere Condensee GEMaC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay CNRS Univ Versailles St Quentin En Yvelines ILV 45 Ave Etats Unis F-78035 Versailles France;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

    SrVO3; perovskite oxides; nanorods; surface reactions; thin films;

    机译:SRVO3;钙钛矿氧化物;纳米棒;表面反应;薄膜;

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