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机译:金属双纳米晶体改性有缺陷的BIVO4光电曝光(040)刻面,用于光电化学水分裂
Shaanxi Univ Sci &
Technol Sch Mat Sci &
Engn Xian 710021 Shaanxi Peoples R China;
Shaanxi Univ Sci &
Technol Sch Mat Sci &
Engn Xian 710021 Shaanxi Peoples R China;
Shaanxi Univ Sci &
Technol Sch Mat Sci &
Engn Xian 710021 Shaanxi Peoples R China;
Shaanxi Univ Sci &
Technol Sch Mat Sci &
Engn Xian 710021 Shaanxi Peoples R China;
Shaanxi Univ Sci &
Technol Sch Mat Sci &
Engn Xian 710021 Shaanxi Peoples R China;
BiVO4; metallic Bi; oxygen vacancies; photoelectrochemical water splitting;
机译:金属双纳米晶体改性有缺陷的BIVO4光电曝光(040)刻面,用于光电化学水分裂
机译:具有暴露(040)面的BiVO4光电阳极,可增强光电化学性能
机译:AION交换和连续离子层吸附和BIVO4与BI2S3的反应辅助涂层生产纳米结构光电仪,用于增强光电化学水分裂
机译:单斜视WO_3纳米multilayers优先暴露(002)用于光电化学水分裂的刻面
机译:串联水分解装置中BiVO4光电阳极和敏化的宽间隙p型氧化物的半导体光化学
机译:具有暴露的(040)面的BiVO4光电阳极可增强光电化学性能
机译:在BIVO4 PhotoNode中嵌入激光生成的纳米晶体,用于高效光电化学水分子