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首页> 外文期刊>Biochimica et biophysica acta. Biomembranes >Expression of voltage-gated calcium channels augments cell susceptibility to membrane disruption by nanosecond pulsed electric field
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Expression of voltage-gated calcium channels augments cell susceptibility to membrane disruption by nanosecond pulsed electric field

机译:电压门控钙通道的表达增强了纳秒脉冲电场对膜中断的细胞敏感性

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We compared membrane permeabilization by nanosecond pulsed electric field (nsPEF) in HEK293 cells with and without assembled CaV1.3 L-type voltage-gated calcium channel (VGCC). Individual cells were subjected to one 300-ns pulse at 0 (sham exposure); 1.4; 1.8; or 2.3 kV/cm, and membrane permeabilization was evaluated by measuring whole-cell currents and by optical monitoring of cytosolic Ca2+. nsPEF had either no effect (0 and 1.4 kV/cm), or caused a lasting ( 80 s) increase in the membrane conductance in about 50% of cells (1.8 kV/cm), or in all cells (2.3 kV/cm). The conductance pathway opened by nsPEF showed strong inward rectification, with maximum conductance increase for the inward current at the most negative membrane potentials. Although these potentials were below the depolarization threshold for VGCC activation, the increase in conductance in cells which expressed VGCC (VGCC + cells) was about twofold greater than in cells which did not (VGCC cells). Among VGCC + cells, the nsPEF-induced increase in membrane conductance showed a positive correlation with the amplitude of VGCC current measured in the same cells prior to nsPEF exposure. These findings demonstrate that the expression of VGCC makes cells more susceptible to membrane permeabilization by nsPEF. Time-lapse imaging of nsPEF-induced Ca2+ transients confirmed permeabilization by a single 300-ns pulse at 1.8 or 2.3 kV/cm, but not at 1.4 kV/cm, and the transients were expectedly larger in VGCC + cells. However, it remains to be established whether larger transients reflected additional Ca2+ entry through VGCC, or were a result of more severe electropermeabilization of VGCC + cells.
机译:我们将纳秒脉冲电场(NSPEF)与HEK293细胞中的纳秒脉冲电场(NPEF)进行了比较了膜透化物,而没有组装的CAV1.3 L型电压门控钙通道(VGCC)。在0(假曝光)下对单个细胞进行一个300ns脉冲; 1.4; 1.8;通过测量全细胞电流并通过细胞溶质CA2 +的光学监测来评估2.3kV / cm,并通过胞质CA2 +的光学监测来评价膜渗透性。 NPEF没有效果(0和1.4 kV / cm),或者导致延长(& 80s)在约50%的细胞(1.8kV / cm)或所有细胞中增加(1.8 kV / cm)(2.3kV /厘米)。由NSPEF开口的电导通路显示出强大的向内整流,最大电流为最负膜电位的向内电流增加。尽管这些电位低于VGCC激活的去极化阈值,但表达VGCC(VGCC +细胞)的细胞的电导率的增加大约于未(VGCC细胞)的细胞大致重二伏。在VGCC +细胞中,NPFEF诱导的膜导升高显示与在NPPEF暴露之前在同一细胞中测量的VGCC电流的幅度的正相关。这些发现表明VGCC的表达使得细胞通过NPEF更容易受到膜透化的影响。 NPSPEF诱导的CA2 +瞬变的延时成像通过1.8或2.3kV / cm的单个300-ns脉冲确认渗透,但不是1.4kV / cm,并且在VGCC +细胞中瞬变较大。然而,仍然是通过VGCC反映额外CA2 +进入的较大瞬态的仍然建立,或者是VGCC +细胞更严重的电磁偏离的结果。

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