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All carbon nanotube based flexible field emission devices prepared through a film transfer method

机译:所有基于碳纳米管的柔性场发射装置通过薄膜转移方法制备

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摘要

Utilizing carbon nanotubes (CNTs) as substitutes for the conventional rigid indium-tin oxide (ITO) electrodes, all CNT based flexible field emission devices (FEDs) were possible to prepare with a novel film transfer method. In the method, both CNT-based flexible cathode and anode were fabricated by first attaching the vacuum filtered CNT film/mixed cellulose eater (MCE) filter membrane to an adhesive semi-cured poly(dimethyl siloxane) substrate, and then peeling off the MCE filter membrane. Effects of bending direction and bending radius on field emission properties were studied. The field emission performance of the convex bending device was worse than that of the flat device and deteriorated further with the decrease of bending radius. In contrast, the concave bending device exhibited better field emission properties than the flat device; nevertheless, its field emission properties decreased as the concave bending radius reduced below a certain value. The method achieved two successes. One is that the interfacial interaction between CNT films and the flexible substrate was greatly enhanced. The other is that the transfer process improved the field emission properties due to the increase of vertically aligned CNT tips. Compared with traditional methods applied in FED preparation, the novel modified transfer method is organic free, easy to control, cheap, and environment friendly.
机译:利用碳纳米管(CNT)作为常规刚性铟 - 氧化锡(ITO)电极的替代物,所有基于CNT的柔性场发射装置(FEDS)可以用新型薄膜转移方法制备。在该方法中,通过首先将真空过滤的CNT薄膜/混合纤维素食器(MCE)过滤器膜加固到粘合半固化的聚(二甲基硅氧烷)基板上,然后从MCE剥离来制造基于CNT的柔性阴极和阳极。过滤膜。研究了弯曲方向和弯曲半径对场发射性能的影响。凸弯曲装置的场排放性能比平板装置的场发射性能差,并且随着弯曲半径的降低而进一步劣化。相反,凹面弯曲装置比平板装置表现出更好的场发射性能;然而,随着凹形弯曲半径降低到一定值的凹形弯曲半径降低,其场发射性能降低。该方法实现了两次成功。一个是,CNT膜和柔性基板之间的界面相互作用大大提高。另一种是由于垂直对齐的CNT提示的增加,转移过程改善了场发射特性。与喂养的食用制剂中的传统方法相比,新型改良的转移方法是有机自由,易于控制,廉价,环保。

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  • 来源
    《RSC Advances》 |2015年第28期|共7页
  • 作者单位

    E China Normal Univ Dept Phys Minist Educ Engn Res Ctr Nanophoton &

    Adv Instrument Shanghai 200062 Peoples R China;

    Zhejiang Univ Dept Phys Hangzhou 310027 Zhejiang Peoples R China;

    E China Normal Univ Dept Phys Minist Educ Engn Res Ctr Nanophoton &

    Adv Instrument Shanghai 200062 Peoples R China;

    E China Normal Univ Dept Phys Minist Educ Engn Res Ctr Nanophoton &

    Adv Instrument Shanghai 200062 Peoples R China;

    E China Normal Univ Dept Phys Minist Educ Engn Res Ctr Nanophoton &

    Adv Instrument Shanghai 200062 Peoples R China;

    E China Normal Univ Dept Phys Minist Educ Engn Res Ctr Nanophoton &

    Adv Instrument Shanghai 200062 Peoples R China;

    E China Normal Univ Dept Phys Minist Educ Engn Res Ctr Nanophoton &

    Adv Instrument Shanghai 200062 Peoples R China;

    Zhejiang Univ Dept Phys Hangzhou 310027 Zhejiang Peoples R China;

    E China Normal Univ Dept Phys Minist Educ Engn Res Ctr Nanophoton &

    Adv Instrument Shanghai 200062 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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