High-k double gate junctionless tunnel FET with a tunable bandgap

摘要

In the present work, the performance of a heterostructure double gate junctionless tunnel FET (HJL-DGTFET) having a tunable source bandgap has been analyzed using a 2D simulation technique. The tunable source HJL-DGTFET shows a high ON-current (approximate to 6.5 x 10(-5) A mu m(-1)) and a very low OFF-current (approximate to 4.8 x 10(-17) A mu m(-1)). The device shows a point subthreshold slope approximate to 36.2 to 26.8 mV per decade and the average subthreshold slope approximate to 86.1 to 84.2 mV per decade for 0.0-40.0% Ge-mole fractions at room temperature with an I-ON/I-OFF ratio of 10(12). The excellent switching characteristics and steeper subthreshold slope at room temperature indicate that this is a promising candidate for the replacement of bulk MOSFETs. In this article, the optimization of device parameters such as the oxide thickness (t(ox)), gate dielectric material and spacer has also been discussed in detail.