...
机译:TiO2 @ AG / P(VDF-HFP)复合材料,具有增强的介电介电常数和相当低的介电损耗
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
机译:TiO2 @ AG / P(VDF-HFP)复合材料,具有增强的介电介电常数和相当低的介电损耗
机译:具有增强介电介电常数和低介电损耗的P(VDF-HFP)/ AG @ TiO2混合膜的高性能
机译:SiO2-Ti0.98in0.01NB0.01O2复合陶瓷,具有低介电损耗,高介电常数和增强击穿电场
机译:具有高介电常数和低介电损耗的介电纳米复合材料
机译:具有高介电常数和低介电损耗特性的聚合物纳米复合材料。
机译:卫星芯结构Fe2O3 @ BaTiO3纳米填料增强P(VDF-HFP)复合材料的介电性能
机译:热塑性聚氨酯/铅锆钛酸钛酸盐/碳纳米管复合材料具有非常高的介电常数和低介电损耗