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首页> 外文期刊>RSC Advances >TiO2@Ag/P (VDF-HFP) composite with enhanced dielectric permittivity and rather low dielectric loss
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TiO2@Ag/P (VDF-HFP) composite with enhanced dielectric permittivity and rather low dielectric loss

机译:TiO2 @ AG / P(VDF-HFP)复合材料,具有增强的介电介电常数和相当低的介电损耗

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摘要

Ag-loaded TiO2 hybrid particles (TiO2@Ag) were synthesized as fillers by using an ethylene glycol reduction method. Based on this, the TiO2@Ag/P(VDF-HFP) hybrid films were prepared by embedding TiO2 nanoparticles in a poly(vinylidene fluoride-co-hexafluoropropylene) [P(VDF-HFP)] matrix. Morphology and thermal analysis show that the introduction of TiO2@Ag does not disrupt the continuity of the polymer matrix, while the strong interaction between fillers and matrix influences the crystallization process of the composite. The adhesion of Ag to TiO2 efficiently separates the Ag particles from connecting and suppresses the formation of a conductive network, and the ultra-small Ag nanoparticles "trap" the carriers due to coulombic blockade and quantum confinement effect, which results in low dielectric loss and electrical conductivity of the composites. As a consequence, the dielectric permittivity of polymer nanocomposites was enhanced by 300% over the P(VDF-HFP) matrix at a filler content of 30 vol% while maintaining a rather low dielectric loss (0.037 at 1 kHz), demonstrating promising applications in electronic devices.
机译:通过使用乙二醇还原方法合成载荷的TiO 2混合颗粒(TiO 2 @ Ag)作为填料。基于此,通过将TiO 2纳米颗粒嵌入聚(偏二氟乙烯 - 共六氟丙烯)[P(VDF-HFP)]基质中,制备TiO 2 @ Ag / P(VD​​F-HFP)混合膜。形态学和热分析表明,TiO2 @ AG的引入不会破坏聚合物基质的连续性,而填料与基质之间的强相互作用影响复合材料的结晶过程。 Ag至TiO2的粘附性有效地将Ag颗粒与连接和抑制导电网络的形成,以及由于库仑阻滞和量子限制效果导致的超小Ag纳米颗粒“捕获”载体,这导致低介电损耗和复合材料的电导率。结果,聚合物纳米复合材料的介电常数在P(VDF-HFP)基质上以30体积为30体积的填料含量增强了300%,同时保持相当低的介电损耗(0.037以1kHz),展示了有前途的应用电子设备。

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  • 来源
    《RSC Advances》 |2016年第73期|共6页
  • 作者单位

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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