Switchable diode effect in BaZrO3 thin films

摘要

Resistive switching behaviour and switchable diode effects in BaZrO3 thin film were systematically studied to understand the charge trapping/detrapping behaviour for memory device applications. The switchable diode effect was studied by designing and fabricating a device in the multilayered structure of Ag/BaZrO3/SrRuO3. The as-grown BaZrO3 film shows bi-layered structure, in which the top layer is polycrystalline while the bottom layer grows epitaxially with the SrRuO3. The charge trapping/detrapping at the metal/insulator interface depletion layer was found to be the mechanism in governing the resistance switching effects. Besides, improved retention properties were achieved from the as-designed structures. Interface states caused by grain boundaries are assumed to be the reason. The findings of these diode characters may provide valuable information for the understanding of resistive switching in oxide materials.