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首页> 外文期刊>RSC Advances >Spin-manipulated phonon dynamics during magnetic phase transitions in triangular lattice antiferromagnet CuCr1-xMgxO2 semiconductor films
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Spin-manipulated phonon dynamics during magnetic phase transitions in triangular lattice antiferromagnet CuCr1-xMgxO2 semiconductor films

机译:三角形晶格反霉菌CuCr1-XMGXO2半导体膜中磁相过渡期间的旋转操纵声音动力学

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摘要

Raman scattering and infrared reflectance spectra of CuCr1-xMgxO2 films (x = 0.03, 0.06 and 0.09) in the temperature range of 5-300 K have been studied, combined with first-principles calculations. The abnormal redshift of the E-g Raman mode center with decreasing temperature below 100 K for the lightly doped film (x = 0.03) is ascribed to the Cr 3d-O 2p-Cu 3d interaction. Strong disturbance of the local spin fluctuation at Cr sites in heavily Mg-doped films (x = 0.06 and 0.09) drives the E-g mode center to a normal blueshift with decreasing temperature. With further decreasing temperature, the out-of-plane structure increases the internal spin-charge coupling. It enhances the spin-flip splitting and brings back the abnormal redshift of the E-g Raman mode center. A similar but more obvious trend can be found from temperature-dependent E-u infrared mode center shifts. Two successive magnetic transitions were observed at the corresponding Neel temperatures T-N1 around 24.7 K and T-N2 around 23.0 K, as manifested by magnetoresistance measurements. The interesting phenomena of phonon dynamics are suggested to be manipulated by the spin structures during the magnetic transitions.
机译:研究了CUCR1-XMGXO2薄膜的拉曼散射和红外反射光谱(x = 0.03,0.06和0.09),已经研究了5-300 k的温度范围,结合了第一原理计算。 E-G拉曼模式中心的异常红移随着较轻的薄膜(x = 0.03)的温度低于100k(x = 0.03),归因于CR 3D-O 2P-Cu 3D相互作用。在掺杂薄膜(x = 0.06和0.09)中Cr位点的局部自旋波动的强烈扰动将E-G模式中心驱动到正常的蓝色,随着温度降低。通过进一步降低温度,平面外结构增加了内部自旋电荷耦合。它增强了旋转翻转分裂,并带回E-G拉曼模式中心的异常红移。从温度相关的E-U红外模式中心换档可以找到类似但更明显的趋势。在约24.7k和T-N2约23.0k的相应Neel温度T-N1,如23.0k的23.0k,如磁阻测量的情况下观察到两个连续的磁性转变。建议在磁过渡期间由旋转结构操纵声子动力学的有趣现象。

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  • 来源
    《RSC Advances 》 |2016年第32期| 共7页
  • 作者单位

    E China Normal Univ Dept Elect Engn Shanghai 200241 Peoples R China;

    E China Normal Univ Dept Elect Engn Shanghai 200241 Peoples R China;

    E China Normal Univ Dept Elect Engn Shanghai 200241 Peoples R China;

    E China Normal Univ Dept Elect Engn Shanghai 200241 Peoples R China;

    E China Normal Univ Dept Elect Engn Shanghai 200241 Peoples R China;

    E China Normal Univ Dept Elect Engn Shanghai 200241 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学 ;
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