...
首页> 外文期刊>RSC Advances >Energy storage performance of Vn+1Cn monolayer as electrode material studied by first-principles calculations
【24h】

Energy storage performance of Vn+1Cn monolayer as electrode material studied by first-principles calculations

机译:VN + 1CN单层的能量存储性能作为第一原理计算研究的电极材料

获取原文
获取原文并翻译 | 示例
           

摘要

Two-dimensional transition metal carbides are expected to be potential negative electrode materials, due to high conductivity, large cation storage capabilities, and unique mechanical properties. In this work, theoretical analysis of Li atom storage capacity and diffusion behavior of the Vn+1Cn monolayer are investigated. It is predicted that the V3C2 and V4C3 monolayers can be synthesized through selective etching of Al layers of the corresponding V3AlC2 and V4AlC3 phases. The Vn+1Cn monolayer is found to be of metallic character with a high total density of states at the Fermi level. Moreover, Vn+1Cn surfaces can be adsorbed by lithium with a low diffusion barrier and high storage capabilities compared with other carbon-based materials. To enhance performance, the surface functionalization should be avoided in the practical synthetic experiments. The above study results provide insight into the energy storage performance of the Vn+1Cn monolayer, and predict that the not yet synthesized V3C2 and V4C3 monolayers are promising candidates for electrode materials.
机译:由于高导电性,大阳离子储存能力和独特的机械性能,预期二维过渡金属碳化物预计是潜在的负极材料。在这项工作中,研究了Li Atom储存能力和VN + 1CN单层的扩散行为的理论分析。预测,V3C2和V4C3单层可以通过相应的V3ALC2和V4ALC3相的Al层的选择性蚀刻来合成。发现VN + 1CN单层是在费米水平下具有高态度的金属特征。此外,与其他基于碳材料相比,VN + 1CN表面可以被具有低扩散屏障和高存储能力的锂吸附。为了提高性能,在实际合成实验中应避免表面官能化。上述研究结果提供了对VN + 1CN单层的能量存储性能的洞察,并预测尚未合成的V3C2和V4C3单层是电极材料的承诺候选者。

著录项

  • 来源
    《RSC Advances》 |2016年第60期|共8页
  • 作者单位

    Harbin Normal Univ Sch Phys &

    Elect Engn Minist Educ Key Lab Photon &

    Elect Bandgap Mat Harbin 150025 Peoples R China;

    Harbin Normal Univ Sch Phys &

    Elect Engn Minist Educ Key Lab Photon &

    Elect Bandgap Mat Harbin 150025 Peoples R China;

    Harbin Normal Univ Sch Phys &

    Elect Engn Minist Educ Key Lab Photon &

    Elect Bandgap Mat Harbin 150025 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号