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首页> 外文期刊>RSC Advances >Influence of polyvinylpyrrolidone (PVP) capping layer on silver nanowire networks: theoretical and experimental studies
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Influence of polyvinylpyrrolidone (PVP) capping layer on silver nanowire networks: theoretical and experimental studies

机译:聚乙烯吡咯烷酮(PVP)覆盖层对银纳米线网络的影响:理论与实验研究

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摘要

This study conducts an experimental and theoretical investigation of the influence of a polyvinylpyrrolidone (PVP) capping layer on silver nanowire (AgNWs) networks. Through a washing method, a PVP layer on AgNWs was removed and the contact resistance (R-C) between AgNWs was reduced, thereby obtaining a reduced sheet resistance (R-S) of AgNW film. During the washing process, the thickness of the PVP layer decreased to 1 nm with an increasing number of washes, as demonstrated by a molecular dynamics simulation. In addition, the size of the change in R-S resulting from the reduction in R-C by the removal of PVP decreased as the areal coverage of NWs increased. In order to explain the results, Monte Carlo simulations were performed and the results show that the reduction in R-C by the removal of PVP apparently reduces the value of R-S more as the areal coverage of NWs decreases and the initial value of R-C of the network increases. Saturation of the reduction in R-S also occurs when the inherent resistance of AgNW (RNW) becomes dominant. Along with the electrical properties, improved transmittance and a reduction in haze were observed with the removal of PVP, and the results prove that R-S can be reduced by reducing R-C without impairing the optical properties of transparent conducting electrodes.
机译:该研究进行了对银纳米线(AGNWS)网络上的聚乙烯吡咯烷酮(PVP)覆盖层的影响的实验和理论研究。通过洗涤方法,除去AgNW上的PVP层,并且降低了AgNW之间的接触电阻(R-C),从而获得AgNW膜的薄层电阻(R-S)。在洗涤过程中,通过分子动力学模拟所证明,PVP层的厚度随着洗涤数量的越来越多地降低至1nm。另外,由于NW的面积覆盖率增加,通过去除PVP而导致的R-S变化的大小降低。为了解释结果,进行了蒙特卡罗模拟,结果表明,随着NWS的面积覆盖率降低和网络的初始值增加,结果表明,通过去除PVP的rc的减少显然降低了卢比的值。 。当AgNW(RNW)的固有电阻变得占主导地位时,也会发生R-S的减少的饱和度。随着电特性,通过去除PVP,观察到改善的透射率和雾度的减少,并且结果证明了通过减少R-C而不损害透明导电电极的光学性质来降低R-S。

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  • 来源
    《RSC Advances》 |2016年第37期|共6页
  • 作者单位

    Samsung Adv Inst Technol Suwon 443803 Gyeonggi Do South Korea;

    Samsung Adv Inst Technol Suwon 443803 Gyeonggi Do South Korea;

    Samsung Adv Inst Technol Suwon 443803 Gyeonggi Do South Korea;

    Sejong Univ Dept Elect Engn Seoul 143747 South Korea;

    Soongsil Univ Dept Mech Engn 369 Sangdo Ro Seoul 156743 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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