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Photonic Network-on-Chip Architectures Using Multilayer Deposited Silicon Materials for High-Performance Chip Multiprocessors

机译:使用多层沉积硅材料的高性能芯片多处理器光子片上网络体系结构

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摘要

Integrated photonics has been slated as a revolutionary technology with the potential to mitigate the many challenges associated with on- and off-chip electrical interconnection networks. To date, all proposed chipscale photonic interconnects have been based on the crystalline silicon platform for CMOS-compatible fabrication. However, maintaining CMOS compatibility does not preclude the use of other CMOS-compatible silicon materials such as silicon nitride and polycrystalline silicon. In this work, we investigate utilizing devices based on these deposited materials to design photonic networks with multiple layers of photonic devices. We apply rigorous device optimization and insertion loss analysis on various network architectures, demonstrating that multilayer photonic networks can exhibit dramatically lower total insertion loss, enabling unprecedented bandwidth scalability. We show that significant improvements in waveguide propagation and waveguide crossing insertion losses resulting from using these materials enables the realization of topologies that were previously not feasible using only the single-layer crystalline silicon approaches.
机译:集成光子技术被认为是一项革命性技术,有望缓解与片上和片外电气互连网络相关的许多挑战。迄今为止,所有提议的芯片级光子互连都基于用于CMOS兼容制造的晶体硅平台。但是,保持CMOS兼容性并不排除使用其他CMOS兼容硅材料,例如氮化硅和多晶硅。在这项工作中,我们研究利用基于这些沉积材料的设备来设计具有多层光子设备的光子网络。我们对各种网络体系结构进行了严格的设备优化和插入损耗分析,证明了多层光子网络可以展现出更低的总插入损耗,从而实现了前所未有的带宽可扩展性。我们显示,由于使用这些材料而导致的波导传播和波导交叉插入损耗的显着改善,使得实现仅使用单层晶体硅方法以前无法实现的拓扑成为可能。

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