Calculations of spin-polarized Goos-Hanchen displacement in magnetically confined GaAs/AlxGa1-xAs nanostructure modulated by spin-orbit couplings

摘要

We theoretically investigate Goos-Hanchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/AlxGa1-xAs nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.