Valley-spin filtering through a nonmagnetic resonant tunneling structure in silicene

摘要

We theoretically investigate how a silecene-based nonmagnetic resonant-tunneling structure, i.e. a double electrostatic potential structure, can be tailored to generate valley- and spin-polarized filtering by using the scattering matrix method. This method allows us to find simple analytical expressions for the scattering amplitudes. It is found that the transmissions of electrons from opposite spin and valley show exactly opposite behaviors, leading to valley and spin filtering in a wide range of transmission directions. These directional-dependent valley-spin polarization behaviors can be used to select preferential directions along which the valley-spin polarization of an initially unpolarized carrier can be strongly enhanced. We also find that this phenomenon arises from the combinations of the coherent effect, electrostatic potential and external electric field. Especially when the direction of the external electric field is changed, the spin filtering properties are contained, while the valley filtering properties can be switched. In addition, the filtering behaviors can be conveniently controlled by electrical gating. Therefore, the results can offer an all-electric method to construct a valley-spin filter in silicene.