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Investigation of Go: Cu nanoparticles produced by green synthesization method and fabrication of Au/Go:Cu/p-Si/al diode

机译:GO调查:采用绿色合成方法生产的Cu纳米粒子,Au / Go的制作:Cu / P-Si / Al二极管

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摘要

With the development of environmental consciousness, the production of metallic and non-metallic nanoparticles has gained importance with the green synthesis methods. In this study, graphene oxide copper nanoparticles (GO:Cu-NPs) have been synthesized by using a special bacterium in the form of a solution and formed GO:Cu thin films on p-Si substrates (GO: Cu/p-Si). Then, their optical, structural, morphological, and chemical composition properties of these thin film samples have been determined by ultraviolet-visible spectrophotometer (UV-VIS), XRD, FE-SEM, and EDS methods, respectively. UV-VIS measurements have shown that GO:Cu thin films have indirect band gap, E-g, with 1.78 eV. XRD measurements have revealed that thin film samples have a polycrystalline structure. Au/GO:Cu/p-Si/Al diode has been fabricated forming Au rectifying contact on GO:Cu/p-Si thin film and Al ohmic contact on the surface and investigated its I-V characteristics. The ideality factor of the devise was found 1.72 which is comparable with some results obtained from similar studies in literature. (C) 2019 Elsevier B.V. All rights reserved.
机译:随着环境意识的发展,金属和非金属纳米粒子的生产具有与绿色合成方法的重要性。在本研究中,通过使用溶液形式的特殊细菌合成石墨烯氧化铜纳米颗粒(GO:Cu-NPS),并在P-Si衬底上形成GO:Cu薄膜(Go:Cu / P-Si) 。然后,这些薄膜样品的光学,结构,形态学和化学成分特性分别通过紫外 - 可见分光光度计(UV-VI),XRD,Fe-SEM和EDS方法测定。 UV-VIS测量表明,GO:Cu薄膜具有间接带隙,E-G,具有1.78eV。 XRD测量透露薄膜样品具有多晶结构。 AU / GO:Cu / P-Si / Al二极管已经制造成型Au矫正接触ON:Cu / P-Si薄膜和表面上的Al欧姆接触并研究其I-V特性。发现设计的理想因素1.72,其与从文献中类似研究获得的结果相当。 (c)2019 Elsevier B.v.保留所有权利。

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