Solar-Blind Photodetector with Lower Dark Current and Higher I-light/I-dark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method

摘要

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 degrees C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (I-dark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger I-light/I-dark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.