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首页> 外文期刊>Journal of Materials Science >Alleviating hysteresis and improving efficiency of MA(1-y)FA(y)PbI(3-x)Br(x) perovskite solar cells by controlling the halide composition
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Alleviating hysteresis and improving efficiency of MA(1-y)FA(y)PbI(3-x)Br(x) perovskite solar cells by controlling the halide composition

机译:通过控制卤化物组合物来减轻MA(1-Y)FA(3-X)PBI(3-X)BR(X)钙钛矿太阳能电池的滞后和提高效率

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摘要

Due to their great potential for application in the future of photovoltaics, perovskite solar cells (PSCs) have attracted much attention recently. Changing the composition in perovskites is important for improving the performance of PSCs. In this work, PSCs with mixed MA/FA and Br/I components are fabricated. By changing the cation/anion composition, the MA(0.7)FA(0.3)Pb(I0.72Br0.18)(3) PSC shows the negligible I-V hysteresis and the enhanced power conversion efficiency. And the statistics result also shows that devices with proper halide composition have a smaller discreteness in the device performance. We demonstrate that the halide ratio is essential for the formation of high-quality perovskite film with longer radiative carrier recombination lifetime, uniform crystal size, and better surface morphology. It is shown that the halide composition in the mixed PSCs could greatly affect the I-V hysteresis and power conversion efficiency (PCE). A proper Br ratio is important to help the device to alleviate the hysteresis and enhance PCE.
机译:由于它们在光伏的未来应用的巨大潜力,佩罗夫斯基特太阳能电池(PSC)最近引起了很多关注。改变Perovskites的组合物对于提高PSC的性能很重要。在这项工作中,制造了具有混合MA / FA和BR / I组件的PSC。通过改变阳离子/阴离子组合物,MA(0.7)FA(0.3)PB(I0.72BR0.18)(3)PSC显示可忽略的I-V滞后和增强的电力转换效率。统计结果还表明,具有适当卤化物组合物的设备在设备性能下具有较小的离散性。我们证明卤化物比对于形成高质量的钙钛矿薄膜,具有较长的辐射载体复合寿命,均匀的晶体尺寸和更好的表面形态。结果表明,混合PSC中的卤化物组合物可以极大地影响I-V滞后和功率转换效率(PCE)。适当的BR比对于帮助设备缓解滞后和增强PCE是重要的。

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  • 来源
    《Journal of Materials Science 》 |2018年第24期| 共11页
  • 作者单位

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

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  • 正文语种 eng
  • 中图分类 工程材料学 ;
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