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机译:Ingazno薄膜晶体管溅射La2O3膜的氢阻挡性能
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
LG Display Co Ltd 245 LG Ro Paju Si 10845 Gyeonggi Do South Korea;
LG Display Co Ltd 245 LG Ro Paju Si 10845 Gyeonggi Do South Korea;
LG Display Co Ltd 245 LG Ro Paju Si 10845 Gyeonggi Do South Korea;
LG Display Co Ltd 245 LG Ro Paju Si 10845 Gyeonggi Do South Korea;
Hanyang Univ Dept Mat Sci &
Chem Engn 55 Hanyangdeahak Ro Ansan 15588 Gyeonggi Do South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
机译:Ingazno薄膜晶体管溅射La2O3膜的氢阻挡性能
机译:与氢化非晶硅薄膜晶体管相比,非晶$ hbox {InGaZnO} _ {4} $薄膜晶体管的双栅特性
机译:电容耦合等离子体辅助磁控溅射制备的低温高性能InGaZnO薄膜晶体管
机译:耐抗Ingazno薄膜晶体管朝向低温多晶氧化物应用
机译:高性能氢化非晶硅薄膜晶体管结构
机译:通过使用富氢Al2O3介电层实现具有极低热收支的高性能a-InGaZnO薄膜晶体管
机译:低温,高性能Ingazno薄膜晶体管,由电容耦合等离子体辅助磁控溅射制造