Direct nanoscale mapping of open circuit voltages at local back surface fields for PERC solar cells

摘要

The open circuit voltage (V-OC) is a critical and common indicator of solar cell performance as well as degradation, for panel down to lab-scale photovoltaics. Detecting V-OC at the nanoscale is much more challenging, however, due to experimental limitations on spatial resolution, voltage resolution, and/or measurement times. Accordingly, an approach based on Conductive Atomic Force Microscopy is implemented to directly detect the local V-OC, notably for monocrystalline Passivated Emitter Rear Contact (PERC) cells which are the most common industrial-scale solar panel technology in production worldwide. This is demonstrated with cross-sectioned monocrystalline PERC cells around the entire circumference of a poly-aluminum-silicide via through the rear emitter. The V-OC maps reveal a local back surface field extending 2 mu m into the underlying p-type Si absorber due to Al in-diffusion as designed. Such high spatial resolution methods for photovoltaic performance mapping are especially promising for directly visualizing the effects of processing parameters, as well as identifying signatures of degradation for silicon and other solar cell technologies.