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首页> 外文期刊>Journal of Materials Science >Pore structure, porosity and compressive strength of highly porous reaction-bonded silicon nitride ceramics with various grain morphologies
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Pore structure, porosity and compressive strength of highly porous reaction-bonded silicon nitride ceramics with various grain morphologies

机译:具有各种晶粒形态的高度多孔反应键合氮化硅陶瓷的孔结构,孔隙率和抗压强度

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摘要

Complex characteristics of the pores and properties of porous reaction-bonded Si3N4 have been investigated and correlated with the microstructure of Si3N4 grains. Porous ceramics with porosities of <= 75 vol% and alpha-Si3N4 matte grains (alpha/beta phase ratio of 1.5) or alpha-Si3N4 whiskers (alpha/beta phase ratio of 0.36) were prepared by in situ nitridation of silicon powder. To obtain various microstructures by alpha -> beta-phase transformation and grain morphology modification, samples were heat-treated at 1700 degrees C while embedded in a Si3N4 powder bed containing MgO. By the growth of alpha-matte or beta-Si3N4 grains on the pore walls, highly interconnected structures with spherical cavities and unimodal pore size distributions resulted with d(50) approximate to 8.8 mu m and approximate to 6.5 mu m, respectively. In contrast, alpha-whiskers grew inside the pore cavities; thus, complex and irregular inter-particle pores appeared which generated an extra peak near d(50) approximate to 1 mu m forming a bimodal pore size distribution. Compared to the alpha-matte grains, alpha-whiskers densified upon heat treatment and produced a large drop in porosity, which resulted in a structure with less interconnectivity. As a consequence of growth of fine beta-rods, pore walls became relatively smooth and whisker free; thus, inter-cluster channels were modified to spherical cavities with d(50) approximate to 3.7 mu m. Samples exhibiting networked whiskers and fine pores or low porosity demonstrated higher compressive strength than the interconnected structures with spherical cavities.
机译:已经研究了多孔反应键合Si3N4的孔和性质的复杂特性,并与Si3N4颗粒的微观结构相关。通过原位氮化硅粉末制备具有孔隙率<= 75体积%和α-βN4哑光晶粒(α-β相比为1.5)或α-β相比为0.36)的多孔陶瓷。通过α->β相变化和晶粒形态改性获得各种微观结构,在1700摄氏度下在含有MgO的Si3N4粉末床中进行样品在1700℃下进行热处理。通过孔壁上的α-哑光或β-Si3N4颗粒的生长,具有球形空腔的高度相互连接的结构和单峰孔径分布,使D(50)近似为8.8μm,分别近似为6.5μm。相比之下,α-晶须在孔腔内延长;因此,似乎复合且不规则的颗粒孔,其产生近d(50)的额外峰值近似为1μm,形成双峰孔径分布。与α-哑光晶粒相比,在热处理时致密化并产生大孔隙率的α晶须,这导致互连较低的结构。由于精细β-棒的生长,孔隙壁变得相对光滑,无须自由晶须;因此,将间簇间通道被修改为具有D(50)的球形空腔近似为3.7μm。显示网络晶须和细孔或低孔隙度的样品显示比具有球形空腔的互连结构更高的抗压强度。

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