Fabrication of highly stable CdS/g-C3N4 composite for enhanced photocatalytic degradation of RhB and reduction of CO2

摘要

CdS/g-C3N4 (CdS/CN) type II heterojunction photocatalyst was prepared by an improved successive ionic layer adsorption and reaction process. TEM results show that the CdS nanoparticles (CdS NPs) were successfully loaded on the surface of CN. The results of PL and PEC display that the construction of CdS/CN heterojunction benefits the transmission of the photogenerated carriers and effectively inhibits the photogenerated carrier recombination in photocatalytic process. The photodegradation experiments exhibit that the 3-CdS/CN photocatalyst possesses the highest photodegradation performance over the other samples. The yields of H-2 and CH4, in the presence of the best CdS/CN photocatalyst (1-CdS/CN) are 50 and 13 times stronger, respectively, than in the case of the pure CN in the photoreduction process of CO2. The CN coupling effectively improves the photocatalytic performance of CdS-based photocatalyst and inhibits the hole-induced photocorrosion of CdS NPs. A possible type II heterojunction photocatalytic mechanism has been provided.