Real-Time Putrescine Detection by Triphenodioxazine-Based Organic Thin-Film Transistor Sensor

摘要

Air-stable p-type PFTPDOBT polymer with triphenodioxazine (TPDO) as the building block has been incorporated into a bottom-gate, bottom-contact organic thin-film transistor (OTFT) to detect putrescine (PUT) vapor in ambient conditions. Due to the doping effect, the PFTPDOBT devices showed increased mobility in air compared with in nitrogen. The highest mobility reached 0.03 cm(2) V-1 s(-1) after annealing at 250 degrees C. The storage stability was evaluated based on the change in the mobility of PFTPDOBT sensors stored in air. Around 55% of the mobility remained after 1 month of air storage. Proper operational stability was obtained at an operating voltage of -100 V. Despite certain degradation, real-time detection of putrescine could be realized by I-DS measurements through time under continuous bias. The detection limit of the PFTPDOBT sensor was found to be 9 ppm. Fast responses were shown with I-DS and mobility decreases, which can be ascribed to a charge trapping effect induced by lone electron pairs in PUT molecules. Further improvements could be achieved to obtain better stability at low operational voltage by using dielectric materials with high dielectric constant, adding an encapsulation layer, or decreasing the capacitance per unit area. Such sensors with easy operation and low cost could be used for food safety inspection and marine environmental monitoring.