Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature

摘要

In this paper, the performance of sequential dual-band mid-wavelength N+-n-p-p-P+-p-p-n-n(+) back-to-back HgCdTe photodiode grown by metal-organic chemical vapor deposition (MOCVD) operating at room temperature is presented. The details of the MOCVD growth procedure are given. The influence of p-type separating-barrier layer on dark current, photocurrent and response time was analyzed. Detectivity without immersion D* higher than 1 x 10(8) cmHz(1/2)/W was estimated for lambda(Peak) = 3.2 mu m and 4.2 mu m, respectively. A response time of tau(s) similar to 1 ns could be reached in both MW1 and MW2 ranges for the optimal P+ barrier Cd composition at the range 0.38-0.42, and extra series resistance related to the processing R-Series equal to 500 Omega.